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MUR3040CT

更新时间： 2023-12-06 20:08:23
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 43K
描述
Powerpack

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MUR3040CT 数据手册

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®
MUR3020CT – MUR3060CT  
30A GLASS PASSIVATED DUAL SUPERFAST RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
B
Superfast 35nS and 50nS Recovery Time  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
TO-220  
C
Dim  
A
B
C
D
E
Min  
13.90  
9.80  
2.54  
3.56  
12.70  
0.51  
3.55 Ø  
5.75  
4.16  
2.03  
0.30  
1.14  
2.29  
Max  
15.90  
10.70  
3.43  
High Surge Current Capability  
G
A
E
Epoxy Meets UL 94V-0 Classification  
Ideally Suited for Use in High Frequency  
SMPS, Inverters and As Free Wheeling Diodes  
PIN1  
2
3
4.56  
D
14.73  
0.96  
F
G
H
I
4.09 Ø  
6.85  
Mechanical Data  
F
Case: TO-220, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: See Diagram  
Weight: 1.9 grams (approx.)  
5.00  
P
J
2.92  
K
L
0.65  
I
1.40  
P
2.79  
Mounting Position: Any  
H
L
J
All Dimensions in mm  
Mounting Torque: 0.6 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
PIN 1  
PIN 3  
PIN 2  
Case  
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
MUR  
3020CT  
MUR  
3030CT  
MUR  
3040CT  
MUR  
3060CT  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
200  
140  
300  
210  
400  
280  
600  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
420  
V
A
Average Rectified Output Current  
@TC = 110°C  
Total Device  
Per Diode  
30  
15  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
(JEDEC Method)  
IFSM  
200  
A
Forward Voltage per diode  
@IF = 15A  
VFM  
IRM  
1.05  
35  
1.25  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
500  
µA  
Reverse Recovery Time (Note 1)  
trr  
50  
nS  
pF  
Typical Junction Capacitance (Note 2)  
CJ  
175  
145  
Thermal Resistance Junction to Ambient per diode  
Thermal Resistance Junction to Case per diode  
RθJA  
RθJC  
60  
2.4  
°C/W  
°C  
Operating and Storage Temperature Range  
TJ, TSTG  
-55 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
© Won-Top Electronics Co., Ltd.  
Revision: March, 2014  
www.wontop.com  
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