Datasheet > MUR115

MUR115

更新时间： 2024-11-26 14:51:31

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
3页	859K
描述
Rectifier device High efficiency recovery rectifier (Trr 50... 75ns)

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中文翻译

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数据手册

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MUR115 数据手册

MUR105 - MUR160

SUPER FAST RECTIFIER DIODES

VOLTAGE RANGE: 50 - 600 V

CURRENT: 1.0 A

Features

Low cost

! Low leakage

Low forward voltage drop

! High current capability

Easily cleaned with alcohol,Isopropanol

and similar solvents

The plastic material carries U/L recognition 94V-0

Mechanical Data

Case: DO-41,molded plastic

Terminals: Axial lead ,solderable per

DO-41

Min

Dim

Max

MIL- STD-202,Method 208

25.40

4.06

Polarity: Color band denotes cathode

Weight: 0.012 ounces,0.34 grams

Mounting position: Any

5.21

0.864

2.72

0.71

2.00

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MUR

105

MUR MUR MUR MUR MUR MUR MUR

Symbol

Characteristic

UNITS

110

115

120

130

140

150

160

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

150

105

150

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forw ard rectified current

1.0

F(AV)

9.5mm lead length,

@T_A=75

Peak forw ard surge current

I_FSM

35.0

8.3ms single half-sine-w ave

superimposed on rated load @T_J=125

Maximum instantaneous forw ard voltage

@ 1.0A

0.875

1.2

V_F

I_R

1.25

Maximum reverse current

@T_A=25

10.0

at rated DC blocking voltage @T_A=100

Maximum reverse recovery time (Note1)

100.0

t_rr

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

C_J

R_θ

Operating junction temperature range

- 55 ----- + 150

T_J

Storage temperature range

T_STG

NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.

2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V DC.

3. Thermal resistance f rom junction to ambient.

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