Datasheet > MUR1100

MUR1100

更新时间： 2023-12-06 20:00:11

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1744K
描述
DO-41

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中文翻译

获取价格

数据手册

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MUR1100 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTTDD

DO-41 Plastic-Encapsulate Diodes

Super Fast Recovery Rectifier Diodes

MUR105 THRU MUR1100

Features

● I_F(AV)

1.0A

DO-41

● VRRM

50V-1000V

● High surge current capability

●

Polarity: Color band denotes cathode

Applications

● Rectifier

Marking

MUR1XX

●

X From 05 To 100

Limiting Values(Absolute Maximum Rating)

MUR

Item

Symbol Unit

Test Conditions

140

105 110 120 130

160 180

1100

V_RRM

1000

300 400 600 800

Repetitive Peak Reverse Voltage

MaximumRMS Voltage

100 200

700

560

RMS

35 70 140 210 280 420

60Hz Half-sine wave，

Resistance load，Ta=75℃

Average Forward Current

1.0

I_F(AV)

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

I_FSM

Operation Junction and

Storage Temperature Range

T_J,T_STG

-55 ~ +150

℃

Electrical Characteristics (T=25℃ Unless otherwise specified）

MUR

Symbol

Unit

Test Condition

Item

105 110 120 130 140 160

180

1100

V_FM

I_RRM2

I_RRM1

1.28

0.95

I_FM=1.0A

Peak Forward Voltage

1.7

T =25℃

Peak Reverse Current

V_RM=V_RRM

μA

T =125℃

Reverse Recovery time

I_F=0.5A,I_R=1.0A,I_rr=0.25A

Between junction and ambient

R_θ

J-A

Thermal

Resistance(Typical)

℃/

R_θ

Between junction and lead

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.27" x 0.27" (7.0 mm x 7.0 mm) copper

pad areas

www.jscj-elec.com

Rev. - 1.1

12 3 4

中文翻译

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