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MUR1080CTR

更新时间： 2022-02-26 11:50:19
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 428K
描述
10.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifiers

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MUR1080CTR 数据手册

 浏览型号MUR1080CTR的Datasheet PDF文件第2页 
MUR1080CTR thru MUR10120CTR  
MUR1080CTR/MUR10100CTR/MUR10120CTR  
Pb Free Plating Product  
10.0 Ampere Heatsink Common Anode Ultra Fast Recovery Rectifiers  
Unit : inch (mm)  
TO-220AB/TO-220-3L  
Features  
.419(10.66)  
.387(9.85)  
.196(5.00)  
.163(4.16)  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency  
Low forward voltage drop  
High current capability  
.139(3.55)  
MIN  
.054(1.39)  
.045(1.15)  
Low reverse leakage current  
High surge current capability  
Application  
Automotive Inverters and Solar Inverters  
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS  
Car Audio Amplifiers and Sound Device Systems  
.038(0.96)  
.019(0.50)  
.025(0.65)MAX  
Mechanical Data  
ꢀ
ꢀ
ꢀ
Case: Heatsink TO-220AB open metal package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
.1(2.54)  
.1(2.54)  
Case  
Case  
Case  
Case  
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 2.2 gram approximately  
Doubler  
Common Cathode Common Anode Tandem Polarity Tandem Polarity  
Suffix "CTD" Suffix "CTS"  
Series  
Negative  
Positive  
Suffix "CT"  
Suffix "CTR"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25 ambient temperature unless otherwise specified.  
℃
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
UNIT  
SYMBOL  
MUR1080CTR MUR10100CTR MUR10120CTR  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
V
RRM  
RMS  
800  
560  
800  
1000  
700  
1200  
840  
V
Maximum DC Blocking Voltage  
V
DC  
1000  
1200  
Maximum Average Forward Rectified  
(Total Device 2x5A=10A)  
Current TC  
=125  
℃
10.0  
150  
1.7  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
Maximum Instantaneous Forward Voltage  
V
F
(Per Diode/Per Leg)  
@ 5.0 A  
5.0  
100  
μA  
μA  
Maximum DC Reverse Current @T  
At Rated DC Blocking Voltage @T  
J
=25  
℃
I
R
J
=125  
℃
nS  
pF  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
75  
90  
1.5  
C
J
R
JC  
℃
/W  
Operating Junction and Storage  
Temperature Range  
-55 to + 150  
℃
T , TSTG  
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.  
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
(3) Thermal Resistance junction to case.  
Page 1/2  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  
12

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