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MUN5237DW1T1 PDF预览

MUN5237DW1T1

更新时间： 2024-11-23 22:22:43
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
8页 201K
描述
Dual Bias Resistor Transistors

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中文翻译

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MUN5237DW1T1 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknown风险等级：5.39
最大集电极电流 (IC)：0.1 A最小直流电流增益 (hFE)：80
元件数量：2极性/信道类型：NPN
最大功率耗散 (Abs)：0.256 W子类别：BIP General Purpose Small Signal
表面贴装：YES晶体管元件材料：SILICON
Base Number Matches：1

MUN5237DW1T1 数据手册

 浏览型号MUN5237DW1T1的Datasheet PDF文件第2页浏览型号MUN5237DW1T1的Datasheet PDF文件第3页浏览型号MUN5237DW1T1的Datasheet PDF文件第4页浏览型号MUN5237DW1T1的Datasheet PDF文件第5页浏览型号MUN5237DW1T1的Datasheet PDF文件第6页浏览型号MUN5237DW1T1的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
Dual Bias ResistorTransistors  
NPN Silicon Surface Mount Transistors  
MUN5211DW1T1  
Series  
with Monolithic Bias Resistor Network  
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base–emitter resistor. These  
digital transistors are designed to replace a single device and its external resistor bias network.  
The BRT eliminates these individual components by integrating them into a single device. In  
the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which  
is ideal for low power surface mount applications where board space is at a premium.  
• Simplifies Circuit Design  
6
5
4
1
2
3
• Reduces Board Space  
SOT 363  
CASE 419B STYLE1  
• Reduces Component Count  
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
6
5
4
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )  
R1  
R2  
Q2  
Rating  
Symbol Value  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V CBO  
V CEO  
I C  
50  
50  
R2  
Q1  
Vdc  
R1  
100  
mAdc  
1
2
3
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
(One Junction Heated)  
Total Device Dissipation  
T A = 25°C  
Symbol  
Max  
Unit  
6
5
4
P D  
187 (Note 1.)  
256 (Note 2.)  
mW  
7X  
1.5 (Note 1.)  
2.0 (Note 2.)  
670 (Note 1.)  
490 (Note 2.)  
mW/°C  
°C/W  
Derate above 25°C  
1
2
3
Thermal Resistance –  
Junction-to-Ambient  
R θJA  
7X = Device Marking  
= (See Page 2)  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
DEVICE MARKING  
INFORMATION  
See specific marking information in  
the device marking table on page 2 of  
this data sheet.  
Total Device Dissipation  
T A = 25°C  
P D  
250 (Note 1.)  
385 (Note 2.)  
2.0 (Note 1.)  
3.0 (Note 2.)  
mW  
Derate above 25°C  
mW/°C  
Thermal Resistance –  
Junction-to-Ambient  
Thermal Resistance –  
Junction-to-Lead  
R θJA  
R θJL  
493 (Note 1.)  
325 (Note 2.)  
188 (Note 1.)  
208 (Note 2.)  
°C/W  
°C/W  
Junction and Storage  
Temperature  
T J , T stg  
–55 to +150  
°C  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
MUN5211dw–1/8  
12345678

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