Datasheet > MUN5215DW1T1

MUN5215DW1T1

更新时间： 2024-02-26 03:25:53

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管光电二极管
页数	文件大小	规格书
8页	201K
描述
Dual Bias Resistor Transistors

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中文翻译

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技术参数
数据手册

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MUN5215DW1T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.85	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	160	元件数量：	2
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.15 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

MUN5215DW1T1 数据手册

LESHAN RADIO COMPANY, LTD.

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistors

MUN5211DW1T1

Series

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base–emitter resistor. These

digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a single device. In

the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which

is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

SOT 363

CASE 419B STYLE1

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )

R₁

R₂

Q₂

Rating

Symbol Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V _CBO

V _CEO

I _C

R₂

Q₁

Vdc

R₁

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

MARKING DIAGRAM

(One Junction Heated)

Total Device Dissipation

T _A= 25°C

Symbol

Max

Unit

P _D

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

670 (Note 1.)

490 (Note 2.)

mW/°C

°C/W

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

R _θJA

7X = Device Marking

= (See Page 2)

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

Total Device Dissipation

T _A= 25°C

P _D

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

Derate above 25°C

mW/°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R _θJA

R _θJL

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

°C/W

Junction and Storage

Temperature

T _J, T _stg

–55 to +150

°C

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

MUN5211dw–1/8

12 3 4 5 6 7 8

中文翻译

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与MUN5215DW1T1相关器件

型号	品牌	获取价格	描述	数据表
MUN5215DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5215DW1T2	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
MUN5215DW1T2	ONSEMI	获取价格	100mA, 50V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
MUN5215DW1T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, CASE 41
MUN5215DW-G	WEITRON	获取价格	Transistor
MUN5215-G	WEITRON	获取价格	Transistor
MUN5215T1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5215T1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS
MUN5215T1	ROCHESTER	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 419-04, SC-70, 3 PIN
MUN5215T1G	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTORS

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