5秒后页面跳转
MUN5135 PDF预览

MUN5135

更新时间: 2024-01-27 21:09:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
10页 131K
描述
Digital Transistors (BRT) R1 = 2.2 k, R2 = 47 k

MUN5135 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.84

MUN5135 数据手册

 浏览型号MUN5135的Datasheet PDF文件第2页浏览型号MUN5135的Datasheet PDF文件第3页浏览型号MUN5135的Datasheet PDF文件第4页浏览型号MUN5135的Datasheet PDF文件第5页浏览型号MUN5135的Datasheet PDF文件第6页浏览型号MUN5135的Datasheet PDF文件第7页 
MUN5135, DTA123JE,  
DTA123JM3, NSBA123JF3  
Digital Transistors (BRT)  
R1 = 2.2 kW, R2 = 47 kW  
PNP Transistors with Monolithic Bias  
Resistor Network  
http://onsemi.com  
PIN CONNECTIONS  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
baseemitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
MARKING DIAGRAMS  
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AECQ101  
Qualified and PPAP Capable  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
SC70/SOT323  
XX MG  
CASE 419  
STYLE 3  
G
1
SC75  
CASE 463  
STYLE 1  
XX M  
XX M  
1
MAXIMUM RATINGS (T = 25°C)  
A
SOT723  
CASE 631AA  
STYLE 1  
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
Collector Current Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
V
V
CBO  
CEO  
1
50  
Vdc  
SOT1123  
CASE 524AA  
STYLE 1  
I
C
100  
12  
mAdc  
Vdc  
X M  
1
V
IN(fwd)  
Input Reverse Voltage  
V
5
Vdc  
IN(rev)  
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
PbFree Package  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 Rev. 1  
DTA123J/D  

与MUN5135相关器件

型号 品牌 获取价格 描述 数据表
MUN5135DW WEITRON

获取价格

Dual Bias Resistor Transistor PNP Silicon
MUN5135DW1 ONSEMI

获取价格

Dual PNP Bias Resistor Transistors
MUN5135DW1_16 ONSEMI

获取价格

Dual PNP Bias Resistor Transistors
MUN5135DW1T1 LRC

获取价格

Dual Bias Resistor Transistors
MUN5135DW1T1 MOTOROLA

获取价格

Dual Bias Resistor Transistors
MUN5135DW1T1 ONSEMI

获取价格

Dual Bias Resistor Transistors
MUN5135DW1T1G ONSEMI

获取价格

Dual Bias Resistor Transistors
MUN5135DW1T2 MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
MUN5135T1 LRC

获取价格

Bias Resistor Transistor
MUN5135T1 ONSEMI

获取价格

Bias Resistor Transistor