MUN5134DW1T1

更新时间： 2024-02-03 03:53:08

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
20页	176K
描述
Dual Bias Resistor Transistors

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MUN5134DW1T1 数据手册

MUN5111DW1T1 Series

Preferred Devices

Dual Bias Resistor

Transistors

PNP Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

http://onsemi.com

The BRT (Bias Resistor Transistor) contains a single transistor with

a monolithic bias network consisting of two resistors; a series base

resistor and a base−emitter resistor. These digital transistors are

designed to replace a single device and its external resistor bias

network. The BRT eliminates these individual components by

integrating them into a single device. In the MUN5111DW1T1 series,

two BRT devices are housed in the SOT−363 package which is ideal

for low−power surface mount applications where board space is at a

premium.

(3)

(2)

(1)

(4)

(5)

(6)

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Available in 8 mm, 7 inch/3000 Unit Tape and Reel

SOT−363

CASE 419B

STYLE 1

MAXIMUM RATINGS

(T = 25°C unless otherwise noted, common for Q and Q )

Rating

Symbol

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

−50

CBO

CEO

MARKING DIAGRAM

Vdc

−100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

187 (Note 1.)

256 (Note 2.)

1.5 (Note 1.)

2.0 (Note 2.)

XX= Specific Device Code

T = 25°C

= Date Code

= (See Page 2)

Derate above 25°C

mW/°C

°C/W

Thermal Resistance −

Junction-to-Ambient

670 (Note 1.)

490 (Note 2.)

DEVICE MARKING INFORMATION

Characteristic

(Both Junctions Heated)

See specific marking information in the device marking table

on page 2 of this data sheet.

Symbol

Max

Unit

Total Device Dissipation

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

T = 25°C

Preferred devices are recommended choices for future use

and best overall value.

Derate above 25°C

mW/°C

°C/W

°C

Thermal Resistance −

Junction-to-Ambient

493 (Note 1.)

325 (Note 2.)

Thermal Resistance −

Junction-to-Lead

188 (Note 1.)

208 (Note 2.)

Junction and Storage

Temperature Range

T , T

−55 to +150

stg

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

December, 2003 − Rev. 5

MUN5111DW1T1/D

12 3 4 5 6 7...20

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与MUN5134DW1T1相关器件

型号	品牌	获取价格	描述	数据表
MUN5134DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5134DW1T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, CASE 41
MUN5134DW-G	WEITRON	获取价格	Transistor
MUN5134-G	WEITRON	获取价格	Transistor
MUN5134T1	LRC	获取价格	Bias Resistor Transistor
MUN5134T1	ONSEMI	获取价格	Bias Resistor Transistor
MUN5134T1	MOTOROLA	获取价格	PNP SILICON BIAS RESISTOR TRANSISTOR
MUN5134T1G	ONSEMI	获取价格	Bias Resistor Transistor
MUN5134T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70,
MUN5135	WEITRON	获取价格	Bias Resistor Transistor PNP Silicon

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