MUN5133T1G

更新时间： 2024-02-01 04:11:39

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
12页	136K
描述
Bias Resistor Transistor

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MUN5133T1G 数据手册

MUN5111T1 Series

Preferred Devices

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space. The device is housed in

the SC−70/SOT−323 package which is designed for low power

surface mount applications.

http://onsemi.com

PNP SILICON

BIAS RESISTOR

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 1

BASE

(INPUT)

• Pb−Free Packages are Available

• Simplifies Circuit Design

• Reduces Board Space

PIN 2

EMITTER

(GROUND)

• Reduces Component Count

• The SC−70/SOT−323 package can be soldered using wave or reflow.

The modified gull−winged leads absorb thermal stress during

soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel − Use the Device Number

to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the

Device Number to order the 13 inch/10,000 unit reel.

SC−70/SOT−323

CASE 419

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

STYLE 3

CBO

CEO

Vdc

MARKING DIAGRAM

100

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

= Specific Device Code

(See Order Info Table)

= Date Code

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

202 (Note 1)

310 (Note 2)

1.6 (Note 1)

2.5 (Note 2)

T = 25°C

ORDERING INFORMATION

Derate above 25°C

°C/W

See specific ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Thermal Resistance, Junction-to-Ambient

618 (Note 1) °C/W

403 (Note 2)

Thermal Resistance, Junction-to-Lead

Junction and Storage Temperature Range

280 (Note 1) °C/W

332 (Note 2)

Preferred devices are recommended choices for future use

and best overall value.

T , T

−55 to +150

°C

stg

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

October, 2004 − Rev. 7

MUN5111T1/D

12 3 4 5 6 7...12

中文翻译

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MUN5133T1G 替代型号

型号	品牌	替代类型	描述	数据表
MUN5133T1	ONSEMI	完全替代	Bias Resistor Transistor
MUN5113T3	ONSEMI	完全替代	Bias Resistor Transistor
MUN5114T1	ONSEMI	完全替代	Bias Resistor Transistor

与MUN5133T1G相关器件

型号	品牌	获取价格	描述	数据表
MUN5133T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70,
MUN5134	WEITRON	获取价格	Bias Resistor Transistor PNP Silicon
MUN5134DW	WEITRON	获取价格	Dual Bias Resistor Transistor PNP Silicon
MUN5134DW1T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5134DW1T1	LRC	获取价格	Dual Bias Resistor Transistors
MUN5134DW1T1	MOTOROLA	获取价格	Dual Bias Resistor Transistors
MUN5134DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5134DW1T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, CASE 41
MUN5134DW-G	WEITRON	获取价格	Transistor
MUN5134-G	WEITRON	获取价格	Transistor

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