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MUN5133T1 PDF预览

MUN5133T1

更新时间： 2024-01-16 07:42:11
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管开关光电二极管
页数 文件大小 规格书
11页 201K
描述
Bias Resistor Transistor

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MUN5133T1 技术参数

生命周期：Transferred零件包装代码：SC-70
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.21.00.95风险等级：5.17
其他特性：BUILT IN BIAS RESISTOR RATIO 10最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-G3
JESD-609代码：e0元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：PNP
功耗环境最大值：0.15 W认证状态：Not Qualified
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
晶体管应用：SWITCHING晶体管元件材料：SILICON
VCEsat-Max：0.25 VBase Number Matches：1

MUN5133T1 数据手册

 浏览型号MUN5133T1的Datasheet PDF文件第2页浏览型号MUN5133T1的Datasheet PDF文件第3页浏览型号MUN5133T1的Datasheet PDF文件第4页浏览型号MUN5133T1的Datasheet PDF文件第5页浏览型号MUN5133T1的Datasheet PDF文件第6页浏览型号MUN5133T1的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor  
MUN5111T1  
SERIES  
with Monolithic Bias Resistor Network  
PNP SILICON  
BIAS RESISTOR  
TRANSISTORS  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter  
resistor. The BRT eliminates these individual components by integrating  
them into a single device. The use of a BRT can reduce both system cost  
and board space. The device is housed in the SC–70/SOT–323 package  
which is designed for low power surface mount applications.  
3
1
2
CASE 419, STYLE 3  
SOT–323 (SC–70)  
PIN 2  
COLLECTOR  
(OUTPUT)  
R1  
R2  
PIN 1  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
BASE  
(INPUT)  
PIN 3  
EMITTER  
(GROUND)  
• The SC–70/SOT–323 package can be soldered using wave or reflow.  
The modified gull–winged leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
MARKINGDIAGRAM  
6X  
M
• Available in 8 mm embossed tape and reel  
Use the Device Number to order the 7 inch/3000 unit reel.  
Replace “T1” with “T3” in the Device Number to order  
the 13 inch/10,000 unit reel.  
6 X  
X
=Specific Device Code  
=(See Marking Table)  
=Date Code  
M
DEVICE MARKING INFORMATION  
See specific marking information in the device marking table on page2 of this data  
sheet.  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Rating  
Symbol  
VCBO  
Value  
50  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
VCEO  
50  
Vdc  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation  
TA = 25°C  
P
202 (Note 1)  
310 (Note 2)  
1.6 (Note 1)  
2.5 (Note 2)  
618 (Note 1)  
403 (Note 2)  
280 (Note 1)  
332 (Note 2)  
–55 to +150  
mW  
D
Derate above 25°C  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance –  
Junction-to-Ambient  
Thermal Resistance –  
Junction-to-Lead  
RθJA  
RθJL  
Junction and Storage  
Temperature Range  
TJ,Tstg  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
MUN5111T1 Series–1/11  
1234567...11

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