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MUN5133DW1T1 PDF预览

MUN5133DW1T1

更新时间： 2024-01-01 12:53:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
20页 176K
描述
Dual Bias Resistor Transistors

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中文翻译

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MUN5133DW1T1 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SC-88包装说明：SMALL OUTLINE, R-PDSO-G6
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：0.94
其他特性：BUILT-IN BIAS RESISTOR RATIO IS 0.12最大集电极电流 (IC)：0.1 A
集电极-发射极最大电压：50 V配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：80JESD-30 代码：R-PDSO-G6
JESD-609代码：e3湿度敏感等级：1
元件数量：2端子数量：6
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：0.15 W认证状态：Not Qualified
子类别：BIP General Purpose Small Signal表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MUN5133DW1T1 数据手册

 浏览型号MUN5133DW1T1的Datasheet PDF文件第2页浏览型号MUN5133DW1T1的Datasheet PDF文件第3页浏览型号MUN5133DW1T1的Datasheet PDF文件第4页浏览型号MUN5133DW1T1的Datasheet PDF文件第5页浏览型号MUN5133DW1T1的Datasheet PDF文件第6页浏览型号MUN5133DW1T1的Datasheet PDF文件第7页 
MUN5111DW1T1 Series  
Preferred Devices  
Dual Bias Resistor  
Transistors  
PNP Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
http://onsemi.com  
The BRT (Bias Resistor Transistor) contains a single transistor with  
a monolithic bias network consisting of two resistors; a series base  
resistor and a base−emitter resistor. These digital transistors are  
designed to replace a single device and its external resistor bias  
network. The BRT eliminates these individual components by  
integrating them into a single device. In the MUN5111DW1T1 series,  
two BRT devices are housed in the SOT−363 package which is ideal  
for low−power surface mount applications where board space is at a  
premium.  
(3)  
(2)  
(1)  
R
1
R
2
Q
1
Q
2
R
2
R
1
(4)  
(5)  
(6)  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel  
1
SOT−363  
CASE 419B  
STYLE 1  
MAXIMUM RATINGS  
(T = 25°C unless otherwise noted, common for Q and Q )  
A
1
2
Rating  
Symbol  
Value  
Unit  
Vdc  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
V
−50  
−50  
CBO  
CEO  
MARKING DIAGRAM  
V
Vdc  
6
I
C
−100  
mAdc  
d
XX  
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
1
Symbol  
Max  
Unit  
Total Device Dissipation  
P
187 (Note 1.)  
256 (Note 2.)  
1.5 (Note 1.)  
2.0 (Note 2.)  
mW  
XX= Specific Device Code  
D
d
T = 25°C  
= Date Code  
= (See Page 2)  
A
Derate above 25°C  
mW/°C  
°C/W  
Thermal Resistance −  
Junction-to-Ambient  
R
670 (Note 1.)  
490 (Note 2.)  
θ
JA  
DEVICE MARKING INFORMATION  
Characteristic  
(Both Junctions Heated)  
See specific marking information in the device marking table  
on page 2 of this data sheet.  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
250 (Note 1.)  
385 (Note 2.)  
2.0 (Note 1.)  
3.0 (Note 2.)  
mW  
D
T = 25°C  
Preferred devices are recommended choices for future use  
and best overall value.  
A
Derate above 25°C  
mW/°C  
°C/W  
°C/W  
°C  
Thermal Resistance −  
Junction-to-Ambient  
R
493 (Note 1.)  
325 (Note 2.)  
θ
JA  
JL  
Thermal Resistance −  
Junction-to-Lead  
R
188 (Note 1.)  
208 (Note 2.)  
θ
Junction and Storage  
Temperature Range  
T , T  
J
−55 to +150  
stg  
1. FR−4 @ Minimum Pad  
2. FR−4 @ 1.0 x 1.0 inch Pad  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
December, 2003 − Rev. 5  
MUN5111DW1T1/D  
 
1234567...20

中文翻译

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MUN5133DW1T1 替代型号

型号 品牌 替代类型 描述 数据表
MUN5133DW1T1G ONSEMI

功能相似

 Dual Bias Resistor Transistors
MUN5133DW1T1 LRC

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 Dual Bias Resistor Transistors

与MUN5133DW1T1相关器件

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MUN5133DW1T1G ONSEMI

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 		Dual Bias Resistor Transistors
MUN5133DW1T2 MOTOROLA

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
MUN5133DW1T3 MOTOROLA

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 		100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
MUN5133T1 LRC

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MUN5133T1 MOTOROLA

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 		PNP SILICON BIAS RESISTOR TRANSISTOR
MUN5133T1 ONSEMI

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 		Bias Resistor Transistor
MUN5133T1G ONSEMI

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 		Bias Resistor Transistor
MUN5133T3 MOTOROLA

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 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70,
MUN5134 WEITRON

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 		Bias Resistor Transistor PNP Silicon
MUN5134DW WEITRON

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 		Dual Bias Resistor Transistor PNP Silicon

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