Datasheet > MUN5132T1

MUN5132T1

更新时间： 2024-09-18 22:45:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
10页	241K
描述
PNP SILICON BIAS RESISTOR TRANSISTOR

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MUN5132T1 数据手册

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by MUN5111T1/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon Surface Mount Transistor with

Monolithic Bias Resistor Network

Motorola Preferred Devices

This new series of digital transistors is designed to replace a single device and its

external resistor bias network. The BRT (Bias Resistor Transistor) contains a single

transistor with a monolithic bias network consisting of two resistors; a series base

resistor and a base–emitter resistor. The BRT eliminates these individual components

by integrating them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SC–70/SOT–323 package which

is designed for low power surface mount applications.

PNP SILICON

BIAS RESISTOR

TRANSISTOR

•

Simplifies Circuit Design

Reduces Board Space

PIN3

COLLECTOR

(OUTPUT)

Reduces Component Count

The SC–70/SOT–323 package can be soldered using

wave or reflow. The modified gull–winged leads absorb

thermal stress during soldering eliminating the possibility

of damage to the die.

PIN1

BASE

(INPUT)

•

Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

Replace “T1” with “T3” in the Device Number to order

the 13 inch/10,000 unit reel.

PIN2

EMITTER

(GROUND)

CASE 419–02, STYLE 3

SC–70/SOT–323

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector–Base Voltage

Symbol

Value

Unit

Vdc

CBO

Collector–Emitter Voltage

Collector Current

Vdc

CEO

100

mAdc

(1)

Total Power Dissipation @ T = 25°C

Derate above 25°C

*150

1.2

mW/°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction–to–Ambient (surface mounted)

Operating and Storage Temperature Range

833

°C/W

°C

θJA

T , T

–65 to +150

stg

Maximum Temperature for Soldering Purposes,

Time in Solder Bath

260

°C

Sec

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

MUN5111T1

MUN5112T1

MUN5113T1

MUN5114T1

MUN5115T1

∞

(2)

MUN5116T1

MUN5130T1

MUN5131T1

MUN5132T1

MUN5133T1

MUN5134T1

4.7

1.0

2.2

4.7

∞

1.0

2.2

4.7

1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.

2. New devices. Updated curves to follow in subsequent data sheets.

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4 5 6 7...10

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与MUN5132T1相关器件

型号	品牌	获取价格	描述	数据表
MUN5132T1G	ONSEMI	获取价格	Bias Resistor Transistor
MUN5132T3	MOTOROLA	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-70,
MUN5133	WEITRON	获取价格	Bias Resistor Transistor PNP Silicon
MUN5133	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k
MUN5133DW	WEITRON	获取价格	Dual Bias Resistor Transistor PNP Silicon
MUN5133DW1T1	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5133DW1T1	MOTOROLA	获取价格	Dual Bias Resistor Transistors
MUN5133DW1T1	LRC	获取价格	Dual Bias Resistor Transistors
MUN5133DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
MUN5133DW1T2	MOTOROLA	获取价格	100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR

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