5秒后页面跳转
MUN5131 PDF预览

MUN5131

更新时间: 2024-09-21 12:22:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体数字晶体管
页数 文件大小 规格书
10页 133K
描述
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

MUN5131 数据手册

 浏览型号MUN5131的Datasheet PDF文件第2页浏览型号MUN5131的Datasheet PDF文件第3页浏览型号MUN5131的Datasheet PDF文件第4页浏览型号MUN5131的Datasheet PDF文件第5页浏览型号MUN5131的Datasheet PDF文件第6页浏览型号MUN5131的Datasheet PDF文件第7页 
MUN2131, MMUN2131L,  
MUN5131, DTA123EE,  
DTA123EM3  
Digital Transistors (BRT)  
R1 = 2.2 kW, R2 = 2.2 kW  
http://onsemi.com  
PIN CONNECTIONS  
PNP Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
Simplifies Circuit Design  
Reduces Board Space  
SC59  
CASE 318D  
STYLE 1  
XX MG  
Reduces Component Count  
G
S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101 Qualified  
and PPAP Capable  
1
SOT23  
CASE 318  
STYLE 6  
XXX MG  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
G
Compliant  
1
MAXIMUM RATINGS (T = 25°C)  
A
SC70/SOT323  
CASE 419  
Rating  
CollectorBase Voltage  
CollectorEmitter Voltage  
Collector Current Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
XX MG  
G
V
V
CBO  
CEO  
STYLE 3  
1
50  
Vdc  
SC75  
CASE 463  
STYLE 1  
I
C
100  
12  
mAdc  
Vdc  
XX M  
XX M  
V
IN(fwd)  
1
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
SOT723  
CASE 631AA  
STYLE 1  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
PbFree Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 Rev. 1  
DTA123E/D  

与MUN5131相关器件

型号 品牌 获取价格 描述 数据表
MUN5131DW WEITRON

获取价格

Dual Bias Resistor Transistor PNP Silicon
MUN5131DW1 ONSEMI

获取价格

Dual PNP Bias Resistor Transistors R1 = 2.2 k, R2 = 2.2 k
MUN5131DW1T1 MOTOROLA

获取价格

Dual Bias Resistor Transistors
MUN5131DW1T1 ONSEMI

获取价格

Dual Bias Resistor Transistors
MUN5131DW1T1 LRC

获取价格

Dual Bias Resistor Transistors
MUN5131DW1T1G ONSEMI

获取价格

Dual Bias Resistor Transistors
MUN5131DW1T2 MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
MUN5131DW1T3 MOTOROLA

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, CASE 41
MUN5131DW-G WEITRON

获取价格

Transistor
MUN5131T1 ONSEMI

获取价格

Bias Resistor Transistor