Datasheet > MUN2216T1

MUN2216T1

更新时间： 2024-09-22 22:35:19

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
11页	158K
描述
Bias Resistor Transistor

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MUN2216T1 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.41	Is Samacsys：	N
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	160
元件数量：	1	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.338 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管元件材料：	SILICON
Base Number Matches：	1

MUN2216T1 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

MUN2211T1

SERIES

with Monolithic Bias Resistor Network

NPN SILICON

This new series of digital transistors is designed to replace a single device and

its external resistor bias network. The BRT (Bias Resistor Transistor) contains a

single transistor with a monolithic bias network consisting of two resistors; a

series base resistor and a base–emitter resistor. The BRT eliminates these indi-

vidual components by

BIAS RESISTOR

TRANSISTORS

integrating them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SC–59 package which is

designed for low power surface mount applications.

• Simplifies Circuit Design

SC–59

CASE 318D, STYLE 1

• Reduces Board Space

• Reduces Component Count

PIN 3

• Moisture Sensitivity Level: 1

COLLECTOR

(OUTPUT)

R₁

R₂

PIN 2

• ESD Rating – Human Body Model: Class 1

BASE

ESD Rating – Machine Model: Class B

(INPUT)

PIN 1

EMITTER

• The SC–59 package can be soldered using wave or reflow. The modified

gull–winged leads absorb thermal stress during soldering eliminating the

possibility of damage to the die.

(GROUND)

• Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

MARKINGDIAGRAM

DEVICE MARKING INFORMATION

*See specific marking information in the device marking table on page 2 of this data sheet.

8X = Specific Device Code*

M = Date Code

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Rating

Symbol

V_CBO

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V_CEO

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

T_A= 25°C

230(Note 1)

338(Note 2)

1.8 (Note 1)

2.7 (Note 2)

540(Note 1)

370(Note 2)

264(Note 1)

287(Note 2)

–55 to +150

Derate above 25°C

°C/W

°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R_θJA

R_θJL

Junction and Storage

Temperature Range

T_J, T_stg

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

MUN2211T1 Series–1/11

12 3 4 5 6 7...11

中文翻译

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MUN2216T1 替代型号

型号	品牌	替代类型	描述	数据表
SMUN2216T1	ONSEMI	功能相似	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, CASE 318D-04, SC-59, 3 PIN
MUN2216T1G	ONSEMI	功能相似	Bias Resistor Transistors
MUN2216T1	ONSEMI	功能相似	NPN SILICON BIAS RESISTOR TRANSISTOR

与MUN2216T1相关器件

型号	品牌	获取价格	描述	数据表
MUN2216T1G	ONSEMI	获取价格	Bias Resistor Transistors
MUN2230	WEITRON	获取价格	NPN Silicon Bias Resistor Transistor
MUN2230	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2230-G	WEITRON	获取价格	Transistor
MUN2230RT1	LRC	获取价格	Bias Resistor Transistor
MUN2230T1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2230T1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2230T1	LRC	获取价格	Bias Resistor Transistor
MUN2230T1G	ONSEMI	获取价格	Bias Resistor Transistors
MUN2231	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR

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