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MUN2216RT1 PDF预览

MUN2216RT1

更新时间: 2024-02-22 18:20:12
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
8页 322K
描述
Bias Resistor Transistor

MUN2216RT1 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.8
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):160
元件数量:1极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W子类别:BIP General Purpose Small Signal
表面贴装:YES晶体管元件材料:SILICON
Base Number Matches:1

MUN2216RT1 数据手册

 浏览型号MUN2216RT1的Datasheet PDF文件第2页浏览型号MUN2216RT1的Datasheet PDF文件第3页浏览型号MUN2216RT1的Datasheet PDF文件第4页浏览型号MUN2216RT1的Datasheet PDF文件第5页浏览型号MUN2216RT1的Datasheet PDF文件第6页浏览型号MUN2216RT1的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor with  
MUN2211RT1  
MUN2212RT1  
MUN2213RT1  
Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single device and its  
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single  
transistor with a monolithic bias network consisting of two resistors; a series base  
resistor and a base–emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce both system cost and  
board space. The device is housed in the SC–59 package which is designed for low  
power surface mount applications.  
MUN2214RT1  
MUN2215RT1  
MUN2216RT1  
MUN2230RT1  
MUN2231RT1  
MUN2232RT1  
MUN2233RT1  
MUN2234RT1  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• The SC–59 package can be soldered using wave or reflow.  
The modified gull–winged leads absorb thermal stress during  
soldering eliminating the possibility of damage to the die.  
• Available in 8 mm embossed tape and reel  
NPN SILICON  
BIAS RESISTOR  
TRANSISTOR  
Use the Device Number to order the 7 inch/3000 unit reel.  
3
PIN3  
Collector  
PIN2  
base  
R1  
(Output)  
2
(Input)  
R2  
1
PIN2  
Emitter  
(Ground)  
CASE 318–03 , STYLE 1  
( SC – 59 )  
MAXIMUM RATINGS (T A = 25°C unless otherwise noted)  
Rating  
Symbol  
VCBO  
V CEO  
IC  
Value  
Unit  
Vdc  
Collector-Base Voltage  
50  
50  
Collector-Emitter Voltage  
Vdc  
Collector Current  
Total Power Dissipation @ T A = 25°C (1)  
100  
200  
1.6  
mAdc  
mW  
P D  
Derate above 25°C  
mWC  
THERMALCHARACTERISTICS  
Rating  
Symbol  
R θ JA  
Value  
625  
Unit  
°C/W  
°C  
Thermal Resistance — Junction-to-Ambient (surface mounted)  
Operating and Storage Temperature Range  
Maximum Temperature for Soldering Purposes  
Time in Solder Bath  
T J , T stg  
–65 to +150  
260  
°C  
T L  
10  
Sec  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
8A  
8B  
R1 (K)  
10  
22  
47  
10  
R2 (K)  
MUN2211RT1  
MUN2212RT1  
MUN2213RT1  
MUN2214RT1  
MUN2215RT1(2)  
MUN2216RT1(2)  
MUN2230RT1(2)  
MUN2231RT1(2)  
MUN2232RT1(2)  
MUN2233RT1(2)  
MUN2234RT1(2)  
10  
22  
47  
47  
8C  
8D  
8E  
8F  
8G  
8H  
8J  
8K  
8L  
10  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
1.0  
2.2  
4.7  
47  
47  
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New devices. Updated curves to follow in subsequent data sheets.  
P2–1/8  

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