Datasheet > MUN2212T1

MUN2212T1

更新时间： 2024-01-28 12:18:15

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
11页	158K
描述
Bias Resistor Transistor

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技术参数
数据手册

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MUN2212T1 技术参数

生命周期：	Transferred	零件包装代码：	SC-59
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.28
其他特性：	BUILT IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	60	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
功耗环境最大值：	0.2 W	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
VCEsat-Max：	0.25 V	Base Number Matches：	1

MUN2212T1 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

MUN2211T1

SERIES

with Monolithic Bias Resistor Network

NPN SILICON

This new series of digital transistors is designed to replace a single device and

its external resistor bias network. The BRT (Bias Resistor Transistor) contains a

single transistor with a monolithic bias network consisting of two resistors; a

series base resistor and a base–emitter resistor. The BRT eliminates these indi-

vidual components by

BIAS RESISTOR

TRANSISTORS

integrating them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SC–59 package which is

designed for low power surface mount applications.

• Simplifies Circuit Design

SC–59

CASE 318D, STYLE 1

• Reduces Board Space

• Reduces Component Count

PIN 3

• Moisture Sensitivity Level: 1

COLLECTOR

(OUTPUT)

R₁

R₂

PIN 2

• ESD Rating – Human Body Model: Class 1

BASE

ESD Rating – Machine Model: Class B

(INPUT)

PIN 1

EMITTER

• The SC–59 package can be soldered using wave or reflow. The modified

gull–winged leads absorb thermal stress during soldering eliminating the

possibility of damage to the die.

(GROUND)

• Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

MARKINGDIAGRAM

DEVICE MARKING INFORMATION

*See specific marking information in the device marking table on page 2 of this data sheet.

8X = Specific Device Code*

M = Date Code

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Rating

Symbol

V_CBO

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

V_CEO

Vdc

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

T_A= 25°C

230(Note 1)

338(Note 2)

1.8 (Note 1)

2.7 (Note 2)

540(Note 1)

370(Note 2)

264(Note 1)

287(Note 2)

–55 to +150

Derate above 25°C

°C/W

°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

R_θJA

R_θJL

Junction and Storage

Temperature Range

T_J, T_stg

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

MUN2211T1 Series–1/11

12 3 4 5 6 7...11

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与MUN2212T1相关器件

型号	品牌	描述	获取价格	数据表
MUN2212T1G	ONSEMI	Bias Resistor Transistors	获取价格
MUN2212T3	MOTOROLA	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon	获取价格
MUN2212T3	ROCHESTER	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN	获取价格
MUN2213	WEITRON	NPN Silicon Bias Resistor Transistor	获取价格
MUN2213	ONSEMI	NPN SILICON BIAS RESISTOR TRANSISTOR	获取价格
MUN2213-G	WEITRON	Transistor	获取价格

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