Datasheet > MUN2211T1_07

MUN2211T1_07

更新时间： 2024-09-28 10:42:07

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
18页	161K
描述
Bias Resistor Transistors

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MUN2211T1_07 数据手册

MUN2211T1 Series

Preferred Devices

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SC-59 package which is designed for low power surface

mount applications.

http://onsemi.com

NPN SILICON

BIAS RESISTOR

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 2

BASE

(INPUT)

•ꢀSimplifies Circuit Design

•ꢀReduces Board Space

•ꢀReduces Component Count

•ꢀMoisture Sensitivity Level: 1

PIN 1

EMITTER

(GROUND)

•ꢀESD Rating - Human Body Model: Class 1

- Machine Model: Class B

•ꢀThe SC-59 Package can be Soldered Using Wave or Reflow

•ꢀThe Modified Gull-Winged Leads Absorb Thermal Stress During

Soldering Eliminating the Possibility of Damage to the Die

•ꢀPb-Free Packages are Available

SC-59

CASE 318D

STYLE 1

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Rating

Collector‐Base Voltage

Collector‐Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

Vdc

8xꢀMꢀG

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

8x = Device Code (Refer to page 2)

= Date Code*

Total Device Dissipation

T = 25°C

Derate above 25°C

230 (Note 1)

338 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

G = Pb-Free Package

(Note: Microdot may be in either location)

°C/W

°C

*Date Code orientation may vary depending

upon manufacturing location.

Thermal Resistance, Junction‐to‐Ambient

540 (Note 1)

370 (Note 2)

Thermal Resistance, Junction‐to‐Lead

264 (Note 1)

287 (Note 2)

ORDERING INFORMATION

See detailed ordering and shipping information in the table on

page 2 of this data sheet.

Junction and Storage Temperature

Range

T , T

-ā55 to +150

stg

DEVICE MARKING INFORMATION

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR-4 @ Minimum Pad.

See specific marking information in the Device Marking and

Resistor Values table on page 2 of this data sheet.

Preferred devices are recommended choices for future use

2. FR-4 @ 1.0 x 1.0 inch Pad.

and best overall value.

July, 2007 - Rev. 13

Publication Order Number:

MUN2211T1/D

12 3 4 5 6 7...18

中文翻译

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与MUN2211T1_07相关器件

型号	品牌	获取价格	描述	数据表
MUN2211T1G	ONSEMI	获取价格	Bias Resistor Transistors
MUN2211T3	ONSEMI	获取价格	Bias Resistor Transistors
MUN2211T3	MOTOROLA	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR
MUN2211T3G	ONSEMI	获取价格	Bias Resistor Transistors
MUN2212	WEITRON	获取价格	NPN Silicon Bias Resistor Transistor
MUN2212	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2212RT1	LRC	获取价格	Bias Resistor Transistor
MUN2212T1	MOTOROLA	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2212T1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2212T1	LRC	获取价格	Bias Resistor Transistor

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