Datasheet > MUN2111_09

MUN2111_09

更新时间： 2024-09-30 10:42:11

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
12页	273K
描述
Bias Resistor Transistor PNP Silicon

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MUN2111_09 数据手册

MUN2111 Series

Bias Resistor Transistor

PNP Silicon

COLLECTOR

BASE

EMITTER

SC-59

( T =25 C unless otherwise noted)

Maximum Ratings

Value

Unit

Vdc

Rating

Collector-Emitter Voltage

Symbol

CEO

CBO

Vdc

Collector-Base Voltage

Collector Current-Continuous

mAdc

100

Thermal Characteristics

Characteristics

Symbol

Max

Unit

(1)

Total Device Dissipation FR-5 Board

(1)TA=25 C

230

mW/ C

C/W

Derate above 25 C

1.8

(1)

Thermal Resistance, Junction to Ambient

540

θJA

-55 to +150

Junction and Storage,Temperature Range

1.FR-4 @ minimum pad

J,Tstg

Device Marking and Resistor Values

Device

Marking

R1(K)

R2(K)

Device

Marking

R1(K)

R2(K)

MUN2111

2.2

4.7

100

MUN2131

2.2

4.7

MUN2112

MUN2113

MUN2114

MUN2115

MUN2116

MUN2130

MUN2132

MUN2133

MUN2134

MUN2136

MUN2137

MUN2140

100

4.7

1.0

WEITR O N

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Rev.A 23-Jan-09

12 3 4 5 6 7...12

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