MU4893-HR PDF预览

MU4893-HR

更新时间: 2025-07-17 18:25:19
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描述
Descriptive : Unijuction Transistor; Power Rating : 300; Intrinsic Standoff Ratio Min : 0.55; Intr

MU4893-HR 数据手册

 浏览型号MU4893-HR的Datasheet PDF文件第2页 
MU4891-MU4894  
SILICON UNIJUNCTION TRANSISTOR  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS.  
Rating  
Symbol  
Value  
300  
Unit  
mW  
mA  
Power dissipation(1)  
PD  
IE  
RMS emitter current  
50  
Peak pulse emitter current (2)  
Emitter reverse voltage  
Storage temperature range  
iE  
1.0  
Amps  
Volts  
°C  
VB2E  
30  
Tstg  
-65 to 150  
Note 1: Derate 3mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry.  
VB2B1 = √(RBB · PD)  
Note 2: Capacitance discharge must fall to 0.37 Amp within 3.0ms and PRR ≤ 10PPS.  
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Intrinsic standoff ratio  
(VB2B1 = 10V) (1)  
MU4892  
MU4891, MU4893  
MU4894  
0.51  
0.55  
0.74  
-
-
-
0.69  
0.82  
0.86  
η
-
Interbase resistance  
(VB2B1 = 3V, IE = 0)  
MU4891, MU4892  
MU4893, MU4894  
RBB  
4.0  
4.0  
7.0  
7.0  
9.1  
kΩ  
12.0  
Interbase resistance temperature coefficient  
αRBB  
VEB1(sat)  
IB2(mod)  
IEB2O  
%/°C  
Volts  
mA  
(VB2B1 = 3V, IE = 0, TA = -65° to 100°C)  
0.1  
-
-
0.9  
4.0  
Emitter saturation voltage  
(VB2B1 = 10V, IE = 50mA)(2)  
2.5  
Modulated interbase current  
(VB2B1 = 10V, IE = 50mA)  
10  
-
15  
-
Emitter reverse current  
5.0  
10  
nA  
(VB2E = 30V, IB1 = 0)  
Peak point emitter current  
(VB2B1 = 25V)  
MU4891  
MU4892, MU4893  
MU4894  
-
-
-
0.6  
0.6  
0.6  
5.0  
2.0  
1.0  
IP  
µA  
Valley point current  
(VB2B1 = 20V, RB2 = 100ohms)(2)  
MU4891, MU4893, MU4894  
MU4892  
IV  
2.0  
2.0  
4.0  
3.0  
-
-
mA  
Base-one peak pulse voltage(3)  
Figure 3  
MU4891, MU4892, MU4894  
MU4893  
VOB1  
3.0  
6.0  
5.0  
8.0  
-
-
Volts  
Note 1: Intrinsic standoff ratio: η = (VP-VEB1)/VB2B1, where VP = peak point emitter voltage , VB2B1 = interbase voltage, VEB1 = emitter to base one junction diode drop  
(≈ 0.5V @ 10µA).  
Note 2: PW ≈ 300µs, duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings  
Note 3: Base one peak pulse voltage is used to ensure minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circuits.  
Rev. 20121009  

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