Datasheet > MU10N280L

MU10N280L

更新时间： 2024-11-25 14:53:43

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	412K
描述
小信号金氧半電晶體

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中文翻译

获取价格

数据手册

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MU10N280L 数据手册

MU10N280L

N-Channel Enhancement Mode MOSFET

Drain

Features

• Low Leakage Current

Gate

Applications

• Portable appliances

• Battery management

Source

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter

Symbol

Value

100

Unit

Drain Source Voltage

Gate Source Voltage

Drain Current

V_DS

V_GS

I_D

± 20

1.5

Peak Drain Current, Pulsed ¹⁾

Power Dissipation ²⁾

I_DM

P_D

T_J

1.5

Operating Junction Temperature

Storage Temperature Range

150

℃

T_stg

- 55 to + 150

Thermal Resistance Ratings

Parameter

Symbol

R_θJA

Max.

83.3

Unit

Thermal Resistance from Junction to Ambient ²⁾

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

℃/W

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate in still air.

1 / 6

Dated: 21/07/2023 Rev:02

12 3 4 5 6

中文翻译

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