Datasheet > MU06P115LS

MU06P115LS

更新时间： 2024-11-06 14:56:03

品牌	Logo	应用领域
先科 - SWST		/
页数	文件大小	规格书
6页	440K
描述
小信号金氧半電晶體

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MU06P115LS 数据手册

MU06P115LS

P-Channel Enhancement Mode MOSFET

Features

Drain

• Surface-mounted package

Gate

Applications

Source

• Portable appliances

• Battery management

Absolute Maximum Ratings (at T_a= 25℃ unless otherwise specified)

Parameter Symbol

-V_DS

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

V_GS

-I_D

± 20

Peak Drain Current, Pulsed ¹⁾

-I_DM

P_D

Power Dissipation ²⁾

1.5

℃

Operating Junction and Storage Temperature Range

T_j,T_stg

- 55 to + 150

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

Unit

t ≤ 10 s

Steady State

83.3

125

Thermal Resistance - Junction to Ambient ²⁾

℃/W

¹⁾Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%,Repetitive rating, pulse width limited by junction temperature T_J(MAX)=150°C.

²⁾Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

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Dated: 26/07/2023 Rev:03

12 3 4 5 6

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