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MU06P115LS PDF预览

MU06P115LS

更新时间: 2024-11-21 14:56:03
品牌 Logo 应用领域
先科 - SWST /
页数 文件大小 规格书
6页 440K
描述
小信号金氧半電晶體

MU06P115LS 数据手册

 浏览型号MU06P115LS的Datasheet PDF文件第2页浏览型号MU06P115LS的Datasheet PDF文件第3页浏览型号MU06P115LS的Datasheet PDF文件第4页浏览型号MU06P115LS的Datasheet PDF文件第5页浏览型号MU06P115LS的Datasheet PDF文件第6页 
MU06P115LS  
P-Channel Enhancement Mode MOSFET  
Features  
Drain  
• Surface-mounted package  
Gate  
Applications  
Source  
• Portable appliances  
• Battery management  
Absolute Maximum Ratings (at Ta = 25unless otherwise specified)  
Parameter Symbol  
-VDS  
Value  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
60  
VGS  
-ID  
± 20  
V
4
20  
A
Peak Drain Current, Pulsed 1)  
-IDM  
PD  
A
Power Dissipation 2)  
1.5  
W
Operating Junction and Storage Temperature Range  
Tj ,Tstg  
- 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Max.  
Unit  
t 10 s  
Steady State  
83.3  
125  
Thermal Resistance - Junction to Ambient 2)  
℃/W  
1) Pulse Test: Pulse Width 100 μs, Duty Cycle 2%,Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.  
2) Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.  
1 / 6  
®
Dated: 26/07/2023 Rev:03  

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