Datasheet > MTPIRFF9120T257N

MTPIRFF9120T257N

更新时间： 2024-11-30 04:52:35

品牌	Logo	应用领域
MICROSS		局域网开关脉冲晶体管
页数	文件大小	规格书
7页	1161K
描述
Power Field-Effect Transistor, 5.3A I(D), 100V, 0.85ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257, 3 PIN

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MTPIRFF9120T257N 数据手册

MTPIRFF9120

100V, P-Channel, Repetitive Avalanche -

Advanced Power MOSFET

AVAILABILITY:

 TO‐39

 Isolated TO‐257

 Mil‐Temp Plus

FEATURES:

 Fast Switching

 Repetitive Avalanche

 Dynamic dv/dt Rating

 Hermetically Sealed packaging

 Simple Drive Requirements

 Ease of Paralleling

1 – Gate, 2 – Drain, 3 ‐ Source

PRODUCT SUMMARY

1 – Source, 2 – Gate, 3 ‐ Drain

The use of an enhancement mode FET is a key

element in Minco’s Power MOSFET product family.

This advanced technology minimizes on‐state

resistance, provides superior switching

MINCO PART NUMBER

MTPIRFF9120T39

BVDSS

‐100 V

RDS(on)

0.85 Ω

‐4.0 A

‐5.3 A

MTPIRFF9120T257N

0.85 Ω

performance and allows the device(s) to withstand

high energy pulses in the avalanche and

commutation modes. These devices are well suited

for use in low voltage applications such as audio

amplifiers, high energy DC/DC converters and DC

motor control.

MANUFACTURED USING

PCFQD5P10W

P‐Channel QFET MOSFET

ABSOLUTE MAXIMUM RATINGS

LIMIT

PARAMETER

Drain ‐ Source Voltage

SYMBOL MTPIRFF9120T39 MTPIRFF9120T257N UNITS

V_DS

V_DGR

I_D

‐100

‐4.0

‐100

‐5.3

Drain ‐ Gate Voltage (RGS = 20KΩ)

Continuous Drain Current (@25°C)

Pulsed Drain Current

I_DM

V_GS

P_D

‐16.0

‐21.0

±20

Gate ‐ Source Voltage

Max. Power Dissapation (@25°C)

Linear Derating Factor

W/K

L_DF

I_LM

T_J

0.16

‐16.0

0.24

‐21

Inductive Current, Clamped

Max Operating Junction Temperature

Storage Temperature

‐55°C to 150°C

°C

T_STG

300 (0.063" from case)

Lead Temperature

MTPIRFF9120 -Rev 3.0- 05/14

Minco Technology Labs, LLC reserves the right to change products or specification without notice.

12 3 4 5 6 7

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