Datasheet > MTP4435H8-0-T6-G

MTP4435H8-0-T6-G

更新时间： 2024-02-07 00:23:33

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
11页	609K
描述
P-Channel Enhancement Mode Power MOSFET

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中文翻译

获取价格

数据手册

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MTP4435H8-0-T6-G 数据手册

Spec. No. : C391H8

Issued Date : 2017.02.15

Revised Date :

CYStech Electronics Corp.

Page No. : 1/11

P-Channel Enhancement Mode Power MOSFET

BVDSS

-30V

-41A

-8.8A

MTP4435H8

ID@VGS=-10V, TC=25°C

ID@VGS=-10V, TA=25°C

11mΩ

VGS=-10V, ID=-20A

Features

RDSON(TYP)

14.3mΩ

VGS=-4.5V, ID=-12A

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Pb-free lead plating and Halogen-free package

Symbol

Outline

DFN5×6

MTP4435H8

Pin 1

G：Gate D：Drain S：Source

Pin 1

Ordering Information

Device

Package

Shipping

3000 pcs / Tape & Reel

DFN5×6

MTP4435H8-0-T6-G

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTP4435H8

CYStek Product Specification

12 3 4 5 6 7...11

中文翻译

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