Datasheet > MTP35W

MTP35W

更新时间： 2024-11-24 11:45:59

品牌	Logo	应用领域
尼尔 - NELLSEMI		/
页数	文件大小	规格书
3页	388K
描述
Glass Passivated Triple-Phase Bridge Rectifier, 35A

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中文翻译

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数据手册

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MTP35W 数据手册

RoHS

MTP35W

SEMICONDUCTOR

Nell High Power Products

Glass Passivated Triple-Phase Bridge Rectifier, 35A

MTP3506W Thru MTP3516W

11.7

9.35

Ø8.5

º º º

Ø10.2

Ø4.5

º º

28.5

Ø2

Ø8.5

FEATURES

All dimensions in millimeters

UL recognition file number E320098

Universal 3-way terminals: snap-on, wire

wrap-around, or PCB mounting

Typical IR less than 1.0 µA

High surge current capability

Low thermal resistance

Solder dip 260°C, 40s

Compliant to RoHS

Glass passivated chips

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave

rectification for big power supply, field supply for DC motor,

industrial automation applications.

MECHANICAL DATA

PRIMARY CHARACTERRISTICS

Case: GBPC

I_F(AV)

35A

Epoxy meets UL 94 V-O flammability rating

V_RRM

I_FSM

I_R

600V to 1600V

Terminals: Gold plated on

wire leads,solderable

per J-STD-002 and JESD22-B102.

Polarity: As marked

450A

5 µA

1.2V

Mounting Torque: 20 inches-lbs.max.

Weight: 21g (0.74 ozs)

V_F

T_{J max.}

150ºC

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与MTP35W相关器件

型号	品牌	获取价格	描述	数据表
MTP35W_17	NELLSEMI	获取价格	Glass Passivated Triple-Phase Bridge Rectifier
MTP36N06	MOTOROLA	获取价格	TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM
MTP36N06E	MOTOROLA	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
MTP36N06E16	MOTOROLA	获取价格	36A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP36N06EA	MOTOROLA	获取价格	36 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP36N06EA16A	MOTOROLA	获取价格	36A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP36N06EAF	MOTOROLA	获取价格	Power Field-Effect Transistor, 36A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta
MTP36N06EAJ	MOTOROLA	获取价格	36 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP36N06EC	MOTOROLA	获取价格	36A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MTP36N06ED1	MOTOROLA	获取价格	Power Field-Effect Transistor, 36A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta