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MTP10N10EC PDF预览

MTP10N10EC

更新时间： 2024-09-24 12:59:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
8页 240K
描述
10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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MTP10N10EC 技术参数

生命周期：Obsolete包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.7Is Samacsys：N
外壳连接：DRAIN配置：SINGLE
最小漏源击穿电压：100 V最大漏极电流 (ID)：10 A
最大漏源导通电阻：0.25 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL功耗环境最大值：75 W
认证状态：Not Qualified表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管元件材料：SILICONBase Number Matches：1

MTP10N10EC 数据手册

 浏览型号MTP10N10EC的Datasheet PDF文件第2页浏览型号MTP10N10EC的Datasheet PDF文件第3页浏览型号MTP10N10EC的Datasheet PDF文件第4页浏览型号MTP10N10EC的Datasheet PDF文件第5页浏览型号MTP10N10EC的Datasheet PDF文件第6页浏览型号MTP10N10EC的Datasheet PDF文件第7页 
Order this document  
by MTP10N10E/D  
SEMICONDUCTOR TECHNICAL DATA  
N–Channel Enhancement–Mode Silicon Gate  
TMOS POWER FETs  
10 AMPERES  
This advanced “E” series of TMOS power MOSFETs is designed  
to withstand high energy in the avalanche and commutation  
modes. These new energy efficient devices also offer drain–to–  
source diodes with fast recovery times. Designed for low voltage,  
high speed switching applications in power supplies, converters  
and PWM motor controls, these devices are particularly well suited  
for bridge circuits where diode speed and commutating safe  
operating area are critical, and offer additional safety margin  
against unexpected voltage transients.  
100 VOLTS  
R
= 0.25 OHM  
DS(on)  
D
•
Internal Source–to–Drain Diode Designed to Replace External  
Zener Transient Suppressor — Absorbs High Energy in the  
Avalanche Mode — Unclamped Inductive Switching (UIS)  
Energy Capability Specified at 100°C  
G
•
•
•
Commutating Safe Operating Area (CSOA) Specified for Use  
in Half and Full Bridge Circuits  
Source–to–Drain Diode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
S
Diode is Characterized for Use in Bridge Circuits  
CASE 221A–06, Style 5  
TO–220AB  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
100  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
Gate–Source Voltage  
= 1.0 MΩ)  
V
DGR  
100  
GS  
V
GS  
±20  
Drain Current — Continuous  
Drain Current — Pulsed  
I
D
10  
25  
I
DM  
Total Power Dissipation  
Derate above 25°C  
P
D
75  
0.6  
Watts  
W/°C  
Operating and Storage Temperature Range  
T , T  
–65 to 150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient°  
R
R
1.67  
62.5  
°C/W  
°C  
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds  
T
275  
L
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Motorola, Inc. 1996  
12345678

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