生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.13 |
其他特性: | LEADFORM OPTIONS ARE AVAILABLE | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 10 A | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 0.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 100 pF | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 75 W | 最大功率耗散 (Abs): | 75 W |
最大脉冲漏极电流 (IDM): | 25 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 180 ns |
最大开启时间(吨): | 130 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP10N10E16 | MOTOROLA |
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10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP10N10EA16A | MOTOROLA |
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Power Field-Effect Transistor, 10A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP10N10EAF | MOTOROLA |
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Power Field-Effect Transistor, 10A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP10N10EC | MOTOROLA |
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10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP10N10ED1 | MOTOROLA |
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Power Field-Effect Transistor, 10A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP10N10EL | MOTOROLA |
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TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS | |
MTP10N10EL | ONSEMI |
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Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 | |
MTP10N10ELG | ONSEMI |
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Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 | |
MTP10N10EN | MOTOROLA |
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10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP10N10ES | MOTOROLA |
获取价格 |
10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |