5秒后页面跳转
捷配首页

Datasheet > MTD6N20E
MTD6N20E PDF预览

MTD6N20E

更新时间： 2024-11-19 22:29:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
10页 272K
描述
TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM

阅读下载

中文翻译

获取价格

MTD6N20E 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknown风险等级：5.1
其他特性：AVALANCHE RATED雪崩能效等级（Eas）：54 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：6 A
最大漏极电流 (ID)：6 A最大漏源导通电阻：0.7 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：55 pF
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：N-CHANNEL
功耗环境最大值：50 W最大功率耗散 (Abs)：50 W
最大脉冲漏极电流 (IDM)：18 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICON最大关闭时间（toff）：84.8 ns
最大开启时间（吨）：75.6 nsBase Number Matches：1

MTD6N20E 数据手册

 浏览型号MTD6N20E的Datasheet PDF文件第2页浏览型号MTD6N20E的Datasheet PDF文件第3页浏览型号MTD6N20E的Datasheet PDF文件第4页浏览型号MTD6N20E的Datasheet PDF文件第5页浏览型号MTD6N20E的Datasheet PDF文件第6页浏览型号MTD6N20E的Datasheet PDF文件第7页 
Order this document  
by MTD6N20E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
6.0 AMPERES  
200 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
This advanced TMOS E–FET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain–to–source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
R
= 0.7 OHM  
DS(on)  
D
•
•
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
CASE 369A–13, Style 2  
DPAK  
•
•
•
Diode is Characterized for Use in Bridge Circuits  
G
I
and V Specified at Elevated Temperature  
DSS  
DS(on)  
Surface Mount Package Available in 16 mm, 13–inch/2500  
Unit Tape & Reel, Add –T4 Suffix to Part Number  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
Unit  
Drain–to–Source Voltage  
V
DSS  
200  
Vdc  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
200  
Vdc  
Gate–to–Source Voltage — Continuous  
— Non–repetitive (t ≤ 10 ms)  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
V
GSM  
p
Drain Current — Continuous  
— Continuous @ 100°C  
— Single Pulse (t ≤ 10 µs)  
I
I
6.0  
3.8  
18  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
Total Power Dissipation @ T = 25°C, when mounted to minimum recommended pad size  
P
D
50  
0.4  
1.75  
Watts  
W/°C  
Watts  
A
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 150  
54  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 80 Vdc, V = 10 Vdc, I = 6.0 Apk, L = 3.0 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
— Junction to Ambient  
R
θJC  
R
θJA  
R
θJA  
2.50  
100  
71.4  
°C/W  
— Junction to Ambient, when mounted to minimum recommended pad size  
Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
Motorola, Inc. 1995  
1234567...10

中文翻译

下载PDF

MTD6N20E 替代型号

型号 品牌 替代类型 描述 数据表
MTD5P06VT4G ONSEMI

功能相似

 功率 MOSFET，-60V，-5A，450mΩ，单 P 沟道，DPAK
MTD6P10ET4G ONSEMI

功能相似

 6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3
MTD6N20ET4G ONSEMI

功能相似

 Power MOSFET 6 Amps, 200 Volts N−Channel DPAK

与MTD6N20E相关器件

型号 品牌 获取价格 描述 数据表
MTD6N20E1 ROCHESTER

获取价格

 		6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
MTD6N20E1 ONSEMI

获取价格

 		Power MOSFET 6 Amps, 200 Volts N−Channel DPAK
MTD6N20ET4 ONSEMI

获取价格

 		Power MOSFET 6 Amps, 200 Volts N−Channel DPAK
MTD6N20E-T4 ROCHESTER

获取价格

 		6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
MTD6N20ET4G ONSEMI

获取价格

 		Power MOSFET 6 Amps, 200 Volts N−Channel DPAK
MTD6N20ET5G ONSEMI

获取价格

 		6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPA
MTD6P10E MOTOROLA

获取价格

 		TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM
MTD6P10EG ONSEMI

获取价格

 		6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3
MTD6P10ET4 ONSEMI

获取价格

 		6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
MTD6P10E-T4 MOTOROLA

获取价格

 		6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET

与MTD6N20E相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证