生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | 风险等级: | 5.1 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 54 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 6 A |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 55 pF |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 50 W | 最大功率耗散 (Abs): | 50 W |
最大脉冲漏极电流 (IDM): | 18 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 84.8 ns |
最大开启时间(吨): | 75.6 ns | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MTD5P06VT4G | ONSEMI |
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MTD6P10ET4G | ONSEMI |
功能相似 |
6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 | |
MTD6N20ET4G | ONSEMI |
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Power MOSFET 6 Amps, 200 Volts N−Channel DPAK |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTD6N20E1 | ROCHESTER |
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6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
MTD6N20E1 | ONSEMI |
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Power MOSFET 6 Amps, 200 Volts N−Channel DPAK | |
MTD6N20ET4 | ONSEMI |
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MTD6N20E-T4 | ROCHESTER |
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6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 | |
MTD6N20ET4G | ONSEMI |
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Power MOSFET 6 Amps, 200 Volts N−Channel DPAK | |
MTD6N20ET5G | ONSEMI |
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6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, CASE 369C-01, DPA | |
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TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.66 OHM | |
MTD6P10EG | ONSEMI |
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6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 | |
MTD6P10ET4 | ONSEMI |
获取价格 |
6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 | |
MTD6P10E-T4 | MOTOROLA |
获取价格 |
6A, 100V, 0.66ohm, P-CHANNEL, Si, POWER, MOSFET |