Datasheet > MTD6N15

MTD6N15

更新时间： 2024-10-31 22:29:11

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
10页	234K
描述
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

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MTD6N15 数据手册

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SEMICONDUCTOR TECHNICAL DATA

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

This TMOS Power FET is designed for high speed, low loss

power switching applications such as switching regulators, convert-

ers, solenoid and relay drivers.

6.0 AMPERES

150 VOLTS

= 0.3 OHM

DS(on)

•

Silicon Gate for Fast Switching Speeds

Low R — 0.3 Ω Max

Rugged — SOA is Power Dissipation Limited

Source–to–Drain Diode Characterized for Use With

Inductive Loads

DS(on)

•

Low Drive Requirement — V

= 4.0 V Max

Surface Mount Package on 16 mm Tape

GS(th)

CASE 369A–13, Style 2

DPAK (TO–252)

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

Drain–Gate Voltage (R

150

Vdc

DSS

= 1.0 MΩ)

DGR

150

Gate–Source Voltage — Continuous

Gate–Source Voltage — Non–Repetitive (t ≤ 50 µs)

± 20

± 40

Vdc

Vpk

GSM

Drain Current — Continuous

Drain Current — Pulsed

6.0

Adc

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.16

Watts

W/°C

Total Power Dissipation @ T = 25°C

1.25

0.01

Watts

W/°C

Derate above 25°C

Total Power Dissipation @ T = 25°C (1)

1.75

0.014

Watts

W/°C

Derate above 25°C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

T , T

–65 to +150

°C

stg

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

Thermal Resistance — Junction to Ambient (1)

θJC

θJA

6.25

100

71.4

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

150

—

Vdc

(BR)DSS

= 0 Vdc, I = 0.25 mAdc)

Zero Gate Voltage Drain Current

(V = Rated V , V = 0 Vdc)

µAdc

DSS

—

100

DS DSS GS

= 125°C

(1) These ratings are applicable when surface mounted on the minimum pad size recommended.

(continued)

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1996

12 3 4 5 6 7...10

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MTD6N15 替代型号

型号	品牌	替代类型	描述	数据表
MTD6N15T4G	ONSEMI	功能相似	NâChannel EnhancementâMode Silicon Gate
MTD6N15T4	ONSEMI	功能相似	Power Field Effect Transistor DPAK for Surface Mount
MTD6N15	ONSEMI	功能相似	Power Field Effect Transistor DPAK for Surface Mount

与MTD6N15相关器件

型号	品牌	获取价格	描述	数据表
MTD6N15-1	ONSEMI	获取价格	Power Field Effect Transistor DPAK for Surface Mount
MTD6N15-1	MOTOROLA	获取价格	6A, 150V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
MTD6N15T4	ONSEMI	获取价格	Power Field Effect Transistor DPAK for Surface Mount
MTD6N15T4G	ONSEMI	获取价格	NâChannel EnhancementâMode Silicon Gate
MTD6N20E	ONSEMI	获取价格	Power MOSFET 6 Amps, 200 Volts N−Channel DPAK
MTD6N20E	MOTOROLA	获取价格	TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM
MTD6N20E	ROCHESTER	获取价格	6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
MTD6N20E1	ROCHESTER	获取价格	6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
MTD6N20E1	ONSEMI	获取价格	Power MOSFET 6 Amps, 200 Volts N−Channel DPAK
MTD6N20ET4	ONSEMI	获取价格	Power MOSFET 6 Amps, 200 Volts N−Channel DPAK

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