Datasheet > MTD6N15

MTD6N15

更新时间： 2024-09-11 21:53:51

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
8页	92K
描述
Power Field Effect Transistor DPAK for Surface Mount

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中文翻译

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数据手册
替代型号

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MTD6N15 数据手册

MTD6N15

Power Field Effect

Transistor DPAK

for Surface Mount

N−Channel Enhancement−Mode Silicon

Gate

http://onsemi.com

MAX

I MAX

(BR)DSS

DS(on)

This TMOS Power FET is designed for high speed, low loss power

switching applications such as switching regulators, converters,

solenoid and relay drivers.

150 V

0.3 W

6.0 A

N−CHANNEL

• Silicon Gate for Fast Switching Speeds

• Low R

— 0.3 Ω Max

DS(on)

• Rugged — SOA is Power Dissipation Limited

• Source−to−Drain Diode Characterized for Use With

Inductive Loads

• Low Drive Requirement — V

= 4.0 V Max

GS(th)

• Surface Mount Package on 16 mm Tape

MAXIMUM RATINGS

Rating

Drain−Source Voltage

Symbol

Value

150

Unit

Vdc

DSS

DGR

Drain−Gate Voltage (R = 1.0 MΩ)

150

CASE 369C

DPAK

(Surface Mount)

STYLE 2

CASE 369D

DPAK

(Straight Lead)

STYLE 2

Gate−Source Voltage — Continuous

± 20

± 40

Vdc

Vpk

GSM

Gate−Source Voltage — Non−Repetitive

(t ≤ 50 µs)

Drain Current — Continuous

Drain Current — Pulsed

6.0

Adc

MARKING DIAGRAM

& PIN ASSIGNMENTS

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.16

Watts

W/°C

4 Drain

Total Power Dissipation @ T = 25°C

1.25

0.01

Watts

W/°C

Derate above 25°C (Note 1)

Total Power Dissipation @ T = 25°C (1)

1.75

Watts

Derate above 25°C (Note 2)

0.014

W/°C

Gate

Source

Operating and Storage Junction Temper-

ature Range

T , T

−65 to

+150

°C

stg

Drain

Gate

Source

6N15

= Device Code

= Year

= Work Week

THERMAL CHARACTERISTICS

Characteristic

Drain

Symbol

Value

Unit

Thermal Resistance

− Junction to Case

− Junction to Ambient (Note 1)

− Junction to Ambient (Note 2)

ORDERING INFORMATION

6.25

100

71.4

°C/W

†

Device

Package

Shipping

MTD6N15

DPAK

75 Units/Rail

1. When surface mounted to an FR4 board using the minimum recommended

pad size.

DPAK

Straight Lead

MTD6N15−1

75 Units/Rail

2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.

MTD6N15T4

DPAK

2500 Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

March, 2004 − Rev. 2

MTD6N15/D

12 3 4 5 6 7 8

中文翻译

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MTD6N15 替代型号

型号	品牌	替代类型	描述	数据表
MTD6N15T4G	ONSEMI	功能相似	NâChannel EnhancementâMode Silicon Gate
MTD6N15	MOTOROLA	功能相似	TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM

与MTD6N15相关器件

型号	品牌	获取价格	描述	数据表
MTD6N15-1	ONSEMI	获取价格	Power Field Effect Transistor DPAK for Surface Mount
MTD6N15-1	MOTOROLA	获取价格	6A, 150V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
MTD6N15T4	ONSEMI	获取价格	Power Field Effect Transistor DPAK for Surface Mount
MTD6N15T4G	ONSEMI	获取价格	NâChannel EnhancementâMode Silicon Gate
MTD6N20E	ONSEMI	获取价格	Power MOSFET 6 Amps, 200 Volts N−Channel DPAK
MTD6N20E	MOTOROLA	获取价格	TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM
MTD6N20E	ROCHESTER	获取价格	6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
MTD6N20E1	ROCHESTER	获取价格	6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3
MTD6N20E1	ONSEMI	获取价格	Power MOSFET 6 Amps, 200 Volts N−Channel DPAK
MTD6N20ET4	ONSEMI	获取价格	Power MOSFET 6 Amps, 200 Volts N−Channel DPAK

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