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MTD6N10ET4 PDF预览

MTD6N10ET4

更新时间： 2024-11-01 20:05:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 209K
描述
6A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET

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MTD6N10ET4 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.29.00.95风险等级：5.27
其他特性：AVALANCHE ENERGY RATED雪崩能效等级（Eas）：50 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：6 A
最大漏极电流 (ID)：6 A最大漏源导通电阻：0.4 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：40 W最大脉冲漏极电流 (IDM)：18 A
认证状态：Not Qualified子类别：FET General Purpose Powers
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MTD6N10ET4 数据手册

 浏览型号MTD6N10ET4的Datasheet PDF文件第2页浏览型号MTD6N10ET4的Datasheet PDF文件第3页浏览型号MTD6N10ET4的Datasheet PDF文件第4页浏览型号MTD6N10ET4的Datasheet PDF文件第5页浏览型号MTD6N10ET4的Datasheet PDF文件第6页浏览型号MTD6N10ET4的Datasheet PDF文件第7页 
Order this document  
by MTD6N10E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
6.0 AMPERES  
100 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
This advanced TMOS E–FET is designed to withstand high  
energy in the avalanche and commutation modes. The new energy  
efficient design also offers a drain–to–source diode with a fast  
recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
R
= 0.400 OHM  
DS(on)  
D
•
•
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
G
•
•
•
Diode is Characterized for Use in Bridge Circuits  
CASE 369A–13, Style 2  
DPAK  
I
and V Specified at Elevated Temperature  
DSS  
DS(on)  
Surface Mount Package Available in 16 mm, 13–inch/2500  
Unit Tape & Reel, Add T4 Suffix to Part Number  
Replaces MTD5N10  
S
•
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
Unit  
Drain–Source Voltage  
V
100  
Vdc  
Vdc  
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
V
DGR  
100  
GS  
Gate–Source Voltage — Continuous  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
6.0  
4.5  
18  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
Total Power Dissipation @ T = 25°C, when mounted to minimum recommended pad size  
P
D
40  
0.32  
1.75  
Watts  
W/°C  
Watts  
A
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 150  
50  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 25 Vdc, V = 10 Vdc, I = 6.0 Apk, L = 3.0 mH, R =25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
Thermal Resistance — Junction to Ambient, when mounted to minimum recommended pad size  
R
θJC  
R
θJA  
R
θJA  
3.13  
100  
71.4  
°C/W  
Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995  
1234567...10

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与MTD6N10ET4相关器件

型号 品牌 获取价格 描述 数据表
MTD6N10T4 MOTOROLA

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 		Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta
MTD6N15 MOTOROLA

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 		TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM
MTD6N15 ONSEMI

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 		Power Field Effect Transistor DPAK for Surface Mount
MTD6N15-1 ONSEMI

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 		Power Field Effect Transistor DPAK for Surface Mount
MTD6N15-1 MOTOROLA

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 		6A, 150V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
MTD6N15T4 ONSEMI

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 		Power Field Effect Transistor DPAK for Surface Mount
MTD6N15T4G ONSEMI

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 		N−Channel Enhancement−Mode Silicon Gate
MTD6N20E ONSEMI

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 		Power MOSFET 6 Amps, 200 Volts N−Channel DPAK
MTD6N20E MOTOROLA

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 		TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM
MTD6N20E ROCHESTER

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 		6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3

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