生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code: | unknown | HTS代码: | 8541.29.00.95 |
风险等级: | 5.27 | 其他特性: | AVALANCHE ENERGY RATED |
雪崩能效等级(Eas): | 50 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 6 A | 最大漏极电流 (ID): | 6 A |
最大漏源导通电阻: | 0.4 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 50 pF | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 40 W |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 18 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 58 ns | 最大开启时间(吨): | 64 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTD6N10T4 | MOTOROLA |
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Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta | |
MTD6N15 | MOTOROLA |
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TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM | |
MTD6N15 | ONSEMI |
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Power Field Effect Transistor DPAK for Surface Mount | |
MTD6N15-1 | ONSEMI |
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Power Field Effect Transistor DPAK for Surface Mount | |
MTD6N15-1 | MOTOROLA |
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6A, 150V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 | |
MTD6N15T4 | ONSEMI |
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Power Field Effect Transistor DPAK for Surface Mount | |
MTD6N15T4G | ONSEMI |
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NâChannel EnhancementâMode Silicon Gate | |
MTD6N20E | ONSEMI |
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Power MOSFET 6 Amps, 200 Volts N−Channel DPAK | |
MTD6N20E | MOTOROLA |
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TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM | |
MTD6N20E | ROCHESTER |
获取价格 |
6A, 200V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 |