是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.69 | Is Samacsys: | N |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 6 A |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.25 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 80 pF |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 最低工作温度: | -65 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 20 W |
最大功率耗散 (Abs): | 20 W | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 150 ns |
最大开启时间(吨): | 200 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTD6N10-1 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta | |
MTD6N10E | MOTOROLA |
获取价格 |
TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM | |
MTD6N10E | ONSEMI |
获取价格 |
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,6A I(D),TO-252AA | |
MTD6N10ET4 | ONSEMI |
获取价格 |
6A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET | |
MTD6N10ET4 | MOTOROLA |
获取价格 |
6A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET | |
MTD6N10T4 | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Meta | |
MTD6N15 | MOTOROLA |
获取价格 |
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM | |
MTD6N15 | ONSEMI |
获取价格 |
Power Field Effect Transistor DPAK for Surface Mount | |
MTD6N15-1 | ONSEMI |
获取价格 |
Power Field Effect Transistor DPAK for Surface Mount | |
MTD6N15-1 | MOTOROLA |
获取价格 |
6A, 150V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 |