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MTD1312T4

更新时间： 2024-09-17 19:29:19
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA /
页数 文件大小 规格书
10页 186K
描述
25A, 30V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET

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MTD1312T4 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：unknown风险等级：5.36
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (Abs) (ID)：25 A
最大漏极电流 (ID)：25 A最大漏源导通电阻：0.016 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PSSO-G2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：72 W
最大脉冲漏极电流 (IDM)：75 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

MTD1312T4 数据手册

 浏览型号MTD1312T4的Datasheet PDF文件第2页浏览型号MTD1312T4的Datasheet PDF文件第3页浏览型号MTD1312T4的Datasheet PDF文件第4页浏览型号MTD1312T4的Datasheet PDF文件第5页浏览型号MTD1312T4的Datasheet PDF文件第6页浏览型号MTD1312T4的Datasheet PDF文件第7页 
Order this document  
by MTD1312/D  
SEMICONDUCTOR TECHNICAL DATA  
SINGLE TMOS  
POWER MOSFET  
30 VOLTS  
N–Channel Enhancement Mode Silicon Gate  
R
= 0.016 OHM  
This advanced HDTMOS1A power FET is designed to withstand  
high energy in the avalanche and commutation modes. This new  
energy efficient design also offers a drain–to–source diode with a  
fast recovery time. Designed for low voltage, high speed switching  
applications in power supplies, converters, and PWM motor  
controls, these devices are particularly well suited for bridge circuits  
where diode speed and commutating safe operating areas are  
critical and offer additional safety margin against unexpected  
voltage transients.  
DS(on)  
D
CASE 369A–13, Style 2  
•
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
Diode Is Characterized for Use In Bridge Circuits  
Surface Mount Package Available in 16 mm, 13″ / 2500 Unit  
Tape & Reel, Add “T4” Suffix to Part Number  
G
•
•
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Parameter  
Symbol  
Value  
30  
Unit  
Drain–to–Source Voltage  
V
DSS  
Vdc  
Vdc  
Drain–to–Gate Voltage (R  
GS  
= 1.0 MΩ)  
V
DGR  
30  
Gate–to–Source Voltage — Continuous  
— Non–Repetitive (tp ≤ 10 ms)  
V
± 20  
± 20  
Vdc  
Vpk  
GS  
V
GSM  
Operating and Storage Temperature Range  
T , T  
– 55 to 150  
°C  
J
stg  
POWER RATINGS (T = 25°C unless otherwise specified)  
C
Parameter  
Symbol  
Value  
Unit  
Drain Current — Continuous  
Drain Current — Single Pulse (tp ≤ 10 s)  
I
25  
75  
Adc  
Apk  
Mounted on heat sink  
D
I
T
C
= 25°C  
DM  
Continuous Source Current (Diode Conduction)  
I
25  
72  
Adc  
Watts  
°C/W  
S
V
= 10 Vdc  
GS  
Total Power Dissipation @ T = 25°C  
P
A
D
Steady State  
Thermal Resistance — Junction–to–Case  
R
1.72  
θJC  
Parameter  
Symbol  
Value  
Unit  
Drain Current — Continuous  
Drain Current — Single Pulse (tp ≤ 10 s)  
I
6.0  
18  
Adc  
Apk  
Mounted on minimum recommended  
FR–4 or G–10 board  
D
I
DM  
Continuous Source Current (Diode Conduction)  
I
1.1  
1.0  
118  
Adc  
Watts  
°C/W  
S
V
= 10 Vdc  
GS  
Total Power Dissipation @ T = 25°C  
P
D
A
Steady State  
Thermal Resistance — Junction–to–Ambient  
R
θJA  
DEVICE MARKING  
ORDERING INFORMATION  
Device  
MTD1312T4  
Reel Size  
Tape Width  
12 mm embossed tape  
Quantity  
2500 units  
MTD1312  
13″  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
HDTMOS and HDTMOS1A are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
REV 0  
Motorola, Inc. 1998
1234567...10

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