Datasheet > MTB6D0N03BH8-0-T6-G

MTB6D0N03BH8-0-T6-G

更新时间： 2022-02-26 13:54:22

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	470K
描述
N-Channel Logic Level Enhancement Mode Power MOSFET

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Spec. No. : CA00H8

Issued Date : 2015.02.13

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

N-Channel Logic Level Enhancement Mode Power MOSFET

MTB6D0N03BH8

BVDSS

30V

56A

RDS(ON)@VGS=10V, ID=25A

6.4 mΩ(typ)

10.4 mΩ(typ)

Features

RDS(ON)@VGS=4.5V, ID=20A

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Dynamic dv/dt rating

• Repetitive Avalanche Rated

• Pb-free lead plating and Halogen-free package

Symbol

Outline

DFN5×6

MTB6D0N03BH8

Pin 1

G：Gate D：Drain S：Source

Ordering Information

Device

Package

DFN 5 ×6

(Pb-free lead plating and halogen-free package)

Shipping

MTB6D0N03BH8-0-T6-G

3000 pcs / tape & reel

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTB6D0N03BH8

CYStek Product Specification

12 3 4 5 6 7...9

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