Datasheet > MTB60P06H8

MTB60P06H8

更新时间： 2024-11-26 12:04:19

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	295K
描述
P-Channel Logic Level Enhancement Mode Power MOSFET

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数据手册

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MTB60P06H8 数据手册

Spec. No. : C796H8

Issued Date : 2013.08.19

Revised Date : 2013.09.02

Page No. : 1/9

CYStech Electronics Corp.

P-Channel Logic Level Enhancement Mode Power MOSFET

BVDSS

-60V

-5A

MTB60P06H8

56mΩ

65mΩ

VGS=-10V, ID=-5A

VGS=-4.5V, ID=-4.5A

RDSON(TYP)

Description

The MTB60P06H8 is a P-channel enhancement-mode MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Dynamic dv/dt rating

• Repetitive Avalanche Rated

• Pb-free lead plating and Halogen-free package

Symbol

Outline

EDFN5×6

MTB60P06H8

Pin 1

G：Gate

D：Drain

S：Source

MTB60P06H8

CYStek Product Specification

12 3 4 5 6 7...9

中文翻译

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