5秒后页面跳转
捷配首页

Datasheet > MTB4N80E
MTB4N80E PDF预览

MTB4N80E

更新时间： 2024-01-25 20:46:41
品牌 Logo 应用领域
安森美 - ONSEMI 晶体管
页数 文件大小 规格书
10页 238K
描述
4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3

阅读下载

获取价格

MTB4N80E 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：D2PAK-3针数：3
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.27Is Samacsys：N
雪崩能效等级（Eas）：320 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：800 V
最大漏极电流 (Abs) (ID)：4 A最大漏极电流 (ID)：4 A
最大漏源导通电阻：3 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：125 W
最大脉冲漏极电流 (IDM)：12 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MTB4N80E 数据手册

 浏览型号MTB4N80E的Datasheet PDF文件第2页浏览型号MTB4N80E的Datasheet PDF文件第3页浏览型号MTB4N80E的Datasheet PDF文件第4页浏览型号MTB4N80E的Datasheet PDF文件第5页浏览型号MTB4N80E的Datasheet PDF文件第6页浏览型号MTB4N80E的Datasheet PDF文件第7页 
Order this document  
by MTB4N80E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
TMOS POWER FET  
4.0 AMPERES  
800 VOLTS  
N–Channel Enhancement–Mode Silicon Gate  
2
The D PAK package has the capability of housing a larger die  
R
= 3.0 OHM  
DS(on)  
than any existing surface mount package which allows it to be used  
in applications that require the use of surface mount components  
with higher power and lower R  
capabilities. This high voltage  
DS(on)  
MOSFET uses an advanced termination scheme to provide  
enhanced voltage–blocking capability without degrading perfor-  
mance over time. In addition, this advanced TMOS E–FET is  
designed to withstand high energy in the avalanche and commuta-  
tion modes. The new energy efficient design also offers a  
drain–to–source diode with a fast recovery time. Designed for high  
voltage, high speed switching applications in power supplies,  
converters and PWM motor controls, these devices are particularly  
well suited for bridge circuits where diode speed and commutating  
safe operating areas are critical and offer additional safety margin  
against unexpected voltage transients.  
D
G
CASE 418B–02, Style 2  
2
D PAK  
•
•
•
Robust High Voltage Termination  
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a  
Discrete Fast Recovery Diode  
S
•
•
•
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V  
Specified at Elevated Temperature  
DSS  
DS(on)  
Short Heatsink Tab Manufactured — Not Sheared  
Specially Designed Leadframe for Maximum Power Dissipation  
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
800  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
DGR  
800  
GS  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
4.0  
2.9  
12  
Adc  
D
D
I
Apk  
p
DM  
Total Power Dissipation  
Derate above 25°C  
P
D
125  
1.0  
2.5  
Watts  
W/°C  
Watts  
Total Power Dissipation @ T = 25°C, when mounted with the minimum recommended pad size  
A
Operating and Storage Temperature Range  
T , T  
stg  
– 55 to 150  
320  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 100 Vdc, V  
= 10 Vdc, I = 8.0 Apk, L = 10 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size  
R
θJC  
R
θJA  
R
θJA  
1.0  
62.5  
50  
°C/W  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
L
260  
°C  
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Thermal Clad is a trademark of the Bergquist Company.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 4  
Motorola, Inc. 1996  
1234567...10

下载PDF

与MTB4N80E相关器件

型号 品牌 描述 获取价格 数据表
MTB4N80E1 MOTOROLA TMOS POWER FET 4.0 AMPERES 800 VOLTS

获取价格
MTB4N80ET4 MOTOROLA Power Field-Effect Transistor, 4A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-o

获取价格
MTB4N80ET4 ONSEMI 4A, 800V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3

获取价格
MTB5000 MARKTECH LED Lamp Arrays

获取价格
MTB5000-G MARKTECH LED Lamp Arrays

获取价格
MTB5000-HR MARKTECH LED Lamp Arrays

获取价格

与MTB4N80E相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证