Datasheet > MTA9ASF2G72HZ-3G2

MTA9ASF2G72HZ-3G2

更新时间： 2024-03-03 10:11:43

品牌	Logo	应用领域
镁光 - MICRON		双倍数据速率
页数	文件大小	规格书
9页	336K
描述
260-Pin DDR4 SODIMM: MTA9ASF2G72HZ– 16GB

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MTA9ASF2G72HZ-3G2 数据手册

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16GB (x72, ECC, SR) 260-Pin DDR4 SODIMM

Features

DDR4 SDRAM SODIMM

Addendum

MTA9ASF2G72HZ – 16GB

Features

Figure 1: 260-Pin SODIMM (R/C D2)

• DDR4 functionality and operations supported as

defined in the component data sheet

• 260-pin, small-outline dual in-line memory module

(SODIMM)

• Fast data transfer rate: PC4-3200

• 16GB (2 Gig x 72)

• V_DD= 1.20V (NOM)

• V_PP= 2.5V (NOM)

Primary Side

• V_DDSPD= 2.5V (NOM)

• Supports ECC error detection and correction

• Nominal and dynamic on-die termination (ODT) for

data, strobe, and mask signals

• Low-power auto self refresh (LPASR)

• Data bus inversion (DBI) for data bus

• On-die V_REFDQgeneration and calibration

U10

• Single-rank

• On-board I²C temperature sensor with integrated

Secondary Side

serial presence-detect (SPD) EEPROM

Options

• Operating temperature

– Commercial

(0°C ≤ T_OPER≤ 95°C)

• Package

– 260-pin DIMM (halogen-free)

• Frequency/CAS latency

– 0.625ns @ CL = 22 (DDR4-3200)

Marking

• 16 internal banks; 4 groups of 4 banks each

• Fixed burst chop (BC) of 4 and burst length (BL) of 8

via the mode register set (MRS)

None

• Selectable BC4 or BL8 on-the-fly (OTF)

• Gold edge contacts

• Halogen-free

-3G2

• Fly-by topology

• Terminated control, command, and address bus

Table 1: Addressing

Parameter

16GB

128K A[16:0]

1K A[9:0]

Row address

Column address

Device bank group address

Device bank address per group

Device configuration

Module rank address

4 BG[1:0]

4 BA[1:0]

16Gb (2 Gig x 8), 16 banks

CS0_n

CCM005-341111752-10558

asf9c2gx72hz.pdf - Rev. C 08/2021

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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