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MT9M114EBLSTCZ-CR PDF预览

MT9M114EBLSTCZ-CR

更新时间: 2024-11-08 01:20:07
品牌 Logo 应用领域
安森美 - ONSEMI 传感器换能器
页数 文件大小 规格书
66页 1753K
描述
Digital Image Sensor

MT9M114EBLSTCZ-CR 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:CSP-55Reach Compliance Code:compliant
风险等级:2.05阵列类型:FRAME
动态范围:70.8 dB帧速率:120 fps
水平像素:1296JESD-609代码:e1
安装特点:SURFACE MOUNT最大工作电流:50 mA
最高工作温度:70 °C最低工作温度:-30 °C
光学格式:1/6 inch输出接口类型:2-WIRE INTERFACE
输出范围:0.45-1.35V输出类型:DIGITAL VOLTAGE
封装形状/形式:RECTANGULAR像素大小:1.90X1.90 µm
传感器/换能器类型:IMAGE SENSOR,CMOS最大供电电压:1.95 V
最小供电电压:1.7 V表面贴装:YES
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端接类型:SOLDER
垂直像素:976Base Number Matches:1

MT9M114EBLSTCZ-CR 数据手册

 浏览型号MT9M114EBLSTCZ-CR的Datasheet PDF文件第2页浏览型号MT9M114EBLSTCZ-CR的Datasheet PDF文件第3页浏览型号MT9M114EBLSTCZ-CR的Datasheet PDF文件第4页浏览型号MT9M114EBLSTCZ-CR的Datasheet PDF文件第5页浏览型号MT9M114EBLSTCZ-CR的Datasheet PDF文件第6页浏览型号MT9M114EBLSTCZ-CR的Datasheet PDF文件第7页 
MT9M114: 1/6-Inch 720p High-Definition (HD) System-On-A-Chip (SOC) Dig-  
ital Image Sensor  
1/6-Inch 720p High-Definition (HD) System-On-  
A-Chip (SOC) Digital Image Sensor  
MT9M114 Datasheet, Rev. J  
For the latest datasheet, please visit www.onsemi.com  
Features  
Table 1:  
Key Parameters  
• Superior low-light performance  
• Ultra-low-power  
Parameter  
Typical Value  
Optical format  
Active pixels  
Pixel size  
1/6-inch  
• 720p HD video at 30 fps  
1296 x 976= 1.26 Mp  
1.9 m x 1.9 m  
RGB Bayer  
• Internal master clock generated by on-chip  
phase-locked loop (PLL) oscillator  
• Electronic rolling shutter (ERS), progressive scan  
• Integrated image flow processor (IFP) for single-die  
camera module  
Color filter array  
Shutter type  
Electronic rolling shutter (ERS)  
6 – 54 MHz  
Input clock range  
• Automatic image correction and enhancement  
• Arbitrary image scaling with anti-aliasing  
Two-wire serial interface providing access to  
registers and microcontroller memory  
• Selectable output data format: YCbCr, 565RGB,  
555RGB, 444RGB, processed Bayer, BT656,  
RAW8- and RAW8+2-bit  
Output pixel clock maximum  
96 MHz  
Output MIPI data rate maximum 768 Mb/s  
30 fps full res  
36.7 fps 720p  
75 fps VGA  
120 fps QVGA  
Max. Frame Rate  
2
Responsivity  
2.24 V/lux-sec(550 nm)  
37 dB  
SNR  
MAX  
• Parallel and MIPI data output  
Dynamic range  
70.8 dB  
• Independently configurable gamma correction  
• Adaptive Polynomial lens shading correction  
• UVC interface  
• Perspective correction  
• Multi-camera synchronization  
Digital  
Analog  
I/O  
1.7 – 1.95V  
2.5 – 3.1V  
Supply voltage  
1.7 – 1.95V or 2.5 – 3.1V  
2.5 – 3.1V  
PLL  
PHY  
1.7 – 1.95V  
1
Applications  
Power consumption  
135 mW  
• Embedded notebook, netbook, and desktop monitor  
cameras  
Operating temperature  
(ambient) -TA  
–30°C to +70° C  
27.7°  
Tethered PC cameras  
• Game consoles  
• Cell phones, mobile devices, and consumer video  
communications  
Chief ray angle  
Active imager size  
Package options  
2.46mm (H) x 1.85mm (V),  
3.08mm diagonal  
Bare die, CSP  
• Surveillance, medical, and industrial applications  
Notes: 1. Power consumption for typical voltages and 720p output.  
2. Reduced FOV  
General Description  
The ON Semiconductor MT9M114 is a 1/6-inch 1.26  
Mp CMOS digital image sensor with an active-pixel  
array of 1296H x 976V. It includes sophisticated camera  
functions such as auto exposure control, auto white  
balance, black level control, flicker avoidance, and  
defect correction. It is designed for low light perfor-  
mance.The MT9M114 produces extraordinarily clear,  
sharp digital pictures, making it the perfect choice for  
a wide range of applications, including mobile phones,  
PC and notebook cameras, and gaming systems.  
MT9M114 DS Rev. J Pub. 4/15 EN  
1
©Semiconductor Components Industries, LLC,2015  

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