Visible Light Emitting Diode
MT907-PRSS
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)
I T E M
Power Output
Luminous Intensity
Forward Voltage
SYMBOL
CONDITIONS
IF=20mA
IF=20mA
IF=20mA
VR=5V
MIN
6.4
TYP
MAX
7.9
UNIT
mW
mcd
V
μA
nm
nm
deg.
nS
nS
pF
%/℃
mV/℃
PO
Iv
VF
IR
(1500)
1.8
2.2
100
Reverse Current
Peak Wavelength
Spectral Line Half Width
Half Intensity Beam Angle
Rise Time
λp IF=20mA
Δλ IF=20mA
660
25
±12
30
30
20
θ
Tr
Tf
Cj
I/T
V/T
IF=20mA
IFP=20mA
IFP=20mA
1MHz ,V=0V
IF=10mA
Fall Time
Junction Capacitance
Temp. Coefficient of Iv
Temp. Coefficient of VF
-0.5
-1.5
IF=10mA
RELATIVE POWER vs FORWARD
CURRENT
FORWARD I-V CHARACTERISTICS
60
RADIATION PATTERN
300
200
100
0
120
100
80
60
40
20
0
① Anode
② Cathode
50
40
30
20
10
0
FEATURES
・High Power Output
・Narrow Beam Angle
・High Reliability
Dimensions (Unit:mm)
・Stand-off Type
APPLICATIONS ・Optical Sensor
・Indicators
SPECTRAL OUTPUT
0
1
2
3
-90 -60 -30
0
30
60
90
0
10
20
30
40
50
60
BEAM ANGLE(deg.)
FORWARD VOLTAGE(V)
120
100
80
60
40
20
0
FORWARD CURRENT(mA)
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
FORWARD VOLTAGE vs
TEMPERATURE
IF=10mA
LUMINOUS INTENSITY vs
TEMPERATURE
IF=10mA
I T E M
Forward Current (DC)
Forward Current (Pulse)*1
Reverse Voltage
SYMBOL
IF
IFP
RATINGS
50
UNIT
mA
A
THERMAL DERATING CURVE
3
2.5
2
140
120
100
80
60
50
40
30
20
10
0
0.5
5
VR
V
Power Dissipation
Operating Temp.
Storage Temp.
Junction Temp.
Lead Soldering Temp.*2
*1:Tw=10uS,T=10mS
PD
120
mW
℃
℃
℃
℃
1.5
1
Topr
Tstg
Tj
-20 TO 80
-30 TO 100
100
60
40
0.5
20
0
0
Tls
260
610
660
710
-30
0
30
60
90
-30
0
30
60
90
-30
0
30
60
90
WAVELENGTH(nm)
AMBIENT TEMPERATURE(℃)
AMBIENT TEMPERATURE(℃)
AMBIENT TEMPERATURE(℃)
*2:Time 3 Sec max,Position:Up to 2mm from the body
OPTRANS
To purchase this part contact
Marktech Optoelectronics at
Marktech
Optoelectronics
www.marktechopto.com
800.984.5337
2008/1/29 VSF365S1