Datasheet > MT6L62AE(TE85L)

MT6L62AE(TE85L)

更新时间： 2024-11-21 20:10:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	174K
描述
MT6L62AE(TE85L)

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技术参数
数据手册

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MT6L62AE(TE85L) 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

MT6L62AE(TE85L) 数据手册

MT6L62AE

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT6L62AE

VHF-UHF Band Low Noise Amplifier Application

Unit: mm

VHF-UHF Band Oscillator Application

Mounted Devices

MT3S07S

Three pin SSM type part No.

MT3S03AS

Absolute Maximum Ratings (Ta = 25°C)

Rating

Characteristics

Symbol

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

CEO

EBO

1.5

ES6

JEDEC

―

Base current

JEITA

Collector power dissipation

100

125

(Note1)

TOSHIBA

2-2N1C

Junction temperature

°C

Weight: 3 mg (typ.)

Storage temperature range

stg

−55 to 125

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note1: Total power dissipation of Q1 and Q2

2010-02-24

12 3

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