生命周期: | End Of Life | 零件包装代码: | DIP |
包装说明: | DIP, DIP32,.4 | 针数: | 32 |
Reach Compliance Code: | compliant | ECCN代码: | 3A001.A.2.C |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.36 |
最长访问时间: | 15 ns | I/O 类型: | COMMON |
JESD-30 代码: | R-XDIP-T32 | JESD-609代码: | e0 |
内存密度: | 1048576 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 32 | 字数: | 131072 words |
字数代码: | 128000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
组织: | 128KX8 | 输出特性: | 3-STATE |
封装主体材料: | UNSPECIFIED | 封装代码: | DIP |
封装等效代码: | DIP32,.4 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
电源: | 5 V | 认证状态: | Qualified |
筛选级别: | MIL-STD-883 | 座面最大高度: | 5.89 mm |
最大待机电流: | 0.015 A | 最小待机电流: | 4.5 V |
子类别: | SRAMs | 最大压摆率: | 0.25 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
宽度: | 10 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MT5C1009EC-15L/IT | AUSTIN |
获取价格 |
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE | |
MT5C1009EC-20L/IT | AUSTIN |
获取价格 |
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE | |
MT5C1009EC-20LE/IT | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 20ns, CMOS, CDSO32, CERAMIC, LCC-32 | |
MT5C1009EC-20P/883C | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 20ns, CMOS, CDSO32, CERAMIC, LCC-32 | |
MT5C1009EC-25/883C | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 25ns, CMOS, CDSO32, CERAMIC, LCC-32 | |
MT5C1009EC-25E/XT | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 25ns, CMOS, CDSO32, CERAMIC, LCC-32 | |
MT5C1009EC-25L/883C | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 25ns, CMOS, CDSO32, CERAMIC, LCC-32 | |
MT5C1009EC-25L/IT | AUSTIN |
获取价格 |
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE | |
MT5C1009EC-25L883C | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 25ns, CMOS, CDSO32, CERAMIC, LCC-32 | |
MT5C1009EC-35/883C | MICROSS |
获取价格 |
Standard SRAM, 128KX8, 35ns, CMOS, CDSO32, CERAMIC, LCC-32 |