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MT5C1009CW-20L/883C PDF预览

MT5C1009CW-20L/883C

更新时间： 2023-01-02 19:10:41
品牌 Logo 应用领域
MICROSS 静态存储器
页数 文件大小 规格书
17页 137K
描述
Standard SRAM, 128KX8, 20ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32

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MT5C1009CW-20L/883C 数据手册

 浏览型号MT5C1009CW-20L/883C的Datasheet PDF文件第2页浏览型号MT5C1009CW-20L/883C的Datasheet PDF文件第3页浏览型号MT5C1009CW-20L/883C的Datasheet PDF文件第4页浏览型号MT5C1009CW-20L/883C的Datasheet PDF文件第5页浏览型号MT5C1009CW-20L/883C的Datasheet PDF文件第6页浏览型号MT5C1009CW-20L/883C的Datasheet PDF文件第7页 
SRAM  
MT5C1009  
Austin Semiconductor, Inc.  
128K x 8 SRAM  
WITH CHIP & OUTPUT ENABLE  
PIN ASSIGNMENT  
(Top View)  
32-Pin DIP (C, CW)  
32-Pin SOJ (SOJ)  
32-Pin LCC (EC)  
32-Pin SOJ (DCJ)  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
•SMD 5962-89598  
•MIL-STD-883  
VCC  
31 A15  
NC  
30
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2 10  
A1 11  
A0 12  
DQ1 13  
DQ2 14  
DQ3 15  
1
2
3
4
5
6
7
8
9
32  
VCC  
A15  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ1  
DQ2  
DQ3  
VSS  
1
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
NC  
29 WE\  
28 A13  
27 A8  
WE\  
A13  
A8  
A9  
FEATURES  
26 A9  
A11  
OE\  
A10  
CE\  
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
25 A11  
24 OE\  
23 A10  
22 CE\  
21 DQ8  
20 DQ7  
19 DQ6  
18 DQ5  
17 DQ4  
• Access Times: 12, 15, 20, 25, 35, 45, 55 and 70 ns  
• Battery Backup: 2V data retention  
• Low power standby  
• High-performance, low-power CMOS process  
• Single +5V (+10%) Power Supply  
• Easy memory expansion with CE\ and OE\ options.  
• All inputs and outputs are TTL compatible  
VSS  
16  
32-Pin LCC (ECA)  
32-Pin Flat Pack (F)  
4
3 2 1 32 31 30  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2 10  
A1 11  
A0 12  
DQ1 13  
DQ2 14  
DQ3 15  
VSS 16  
1
2
3
4
5
6
7
8
9
32 VCC  
31 A15  
30
29 WE\  
28 A13  
27 A8  
OPTIONS  
• Timing  
MARKING  
N
C
5
6
7
8
9
10  
11  
12  
13  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ1  
29  
28  
27  
26  
25  
24  
23  
22  
21  
WE  
\
A13  
A8  
26 A9  
A9  
25 A11  
24 OE\  
23 A10  
22 CE\  
21 DQ8  
20 DQ7  
19 DQ6  
18 DQ5  
17 DQ4  
A11  
\
12ns access  
15ns access  
20ns access  
25ns access  
35ns access  
45ns access  
55ns access  
70ns access  
-12 (IT only)  
-15  
-20  
-25  
-35  
-45  
-55*  
-70*  
OE  
A10  
CE1  
\
DQ8  
14 15 16 17 18 19 20  
GENERAL DESCRIPTION  
The MT5C1009 is a 1,048,576-bit high-speed CMOS  
static RAM organized as 131,072 words by 8 bits. This device  
uses 8 common input and output lines and has an output en-  
able pin which operate faster than address access times during  
READ cycle.  
For design flexibility in high-speed memory  
applications, this device offers chip enable (CE\) and output  
enable (OE\) features. These enhancements can place the out-  
puts in High-Z for additional flexibility in system design.  
Writing to these devices is accomplished when write  
enable (WE\) and CE\ inputs are both LOW. Reading is accom-  
plished when WE\ remains HIGH and CE\ and OE\ go LOW.  
The devices offer a reduced power standby mode when dis-  
abled, allowing system designs to achieve low standby power  
requirements.  
• Package(s)•  
Ceramic DIP (400 mil)  
Ceramic DIP (600 mil)  
Ceramic LCC  
Ceramic LCC  
Ceramic Flatpack  
Ceramic SOJ  
C
No. 111  
CW  
EC  
ECA  
F
DCJ  
SOJ  
No. 112  
No. 207  
No. 208  
No. 303  
No. 501  
No. 507  
Ceramic SOJ  
• 2V data retention/low power  
L
*Electrical characteristics identical to those provided for the 45ns  
access devices.  
The “L” version offers a 2V data retention mode, re-  
ducing current consumption to 2mW maximum.  
All devices operate from a single +5V power supply  
and all inputs and outputs are fully TTL compatible. It is par-  
ticularly well suited for use in high-density, high-speed system  
applications.  
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C1009  
Rev. 6.1 06/05  
1
1234567...17

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与MT5C1009CW-20L/883C相关器件

型号 品牌 获取价格 描述 数据表
MT5C1009CW-20LE/883C MICROSS

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 		Standard SRAM, 128KX8, 20ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
MT5C1009CW-25/XT AUSTIN

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 		128K x 8 SRAM WITH CHIP & OUTPUT ENABLE
MT5C1009CW-25L/883C MICROSS

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 		Standard SRAM, 128KX8, 25ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
MT5C1009CW-35/XT AUSTIN

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 		128K x 8 SRAM WITH CHIP & OUTPUT ENABLE
MT5C1009CW-35L/883C MICROSS

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 		Standard SRAM, 128KX8, 35ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
MT5C1009CW-35L/IT MICROSS

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 		Standard SRAM, 128KX8, 35ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
MT5C1009CW-35L/XT MICROSS

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 		Standard SRAM, 128KX8, 35ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
MT5C1009CW-35P/883C MICROSS

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 		Standard SRAM, 128KX8, 35ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
MT5C1009CW-45/883C MICROSS

获取价格

 		Standard SRAM, 128KX8, 45ns, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32
MT5C1009CW-45/XT AUSTIN

获取价格

 		128K x 8 SRAM WITH CHIP & OUTPUT ENABLE

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