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MT5C1008ECA-120/883C PDF预览

MT5C1008ECA-120/883C

更新时间： 2024-11-05 14:26:51
品牌 Logo 应用领域
MICROSS 静态存储器内存集成电路
页数 文件大小 规格书
18页 221K
描述
Standard SRAM

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中文翻译

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MT5C1008ECA-120/883C 数据手册

 浏览型号MT5C1008ECA-120/883C的Datasheet PDF文件第2页浏览型号MT5C1008ECA-120/883C的Datasheet PDF文件第3页浏览型号MT5C1008ECA-120/883C的Datasheet PDF文件第4页浏览型号MT5C1008ECA-120/883C的Datasheet PDF文件第5页浏览型号MT5C1008ECA-120/883C的Datasheet PDF文件第6页浏览型号MT5C1008ECA-120/883C的Datasheet PDF文件第7页 
SRAM  
MT5C1008  
128K x 8 SRAM  
WITH DUAL CHIP ENABLE  
PIN ASSIGNMENT  
(Top View)  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
•SMD 5962-89598  
•MIL-STD-883  
32-Pin DIP (C, CW)  
32-Pin CSOJ (SOJ)  
32-Pin LCC (EC)  
32-Pin SOJ (DCJ)  
VCC  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2 10  
A1 11  
A0 12  
DQ1 13  
DQ2 14  
DQ3 15  
1
2
3
4
5
6
7
8
9
32  
VCC  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ1  
DQ2  
DQ3  
VSS  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
31 A15  
30 CE2  
29 WE\  
28 A13  
27 A8  
A15  
CE2  
WE\  
A13  
A8  
FEATURES  
• High Speed: 12, 15, 20, 25, 35, 45, 55, 70, 85,  
100 and 120 ns  
• Battery Backup: 2V data retention  
• Low power standby  
• High-performance, low-power CMOS process  
• Single +5V (+10%) Power Supply  
• Easy memory expansion with CE1\, CE2, and OE\  
options.  
A9  
26 A9  
A11  
OE\  
A10  
CE\  
DQ8  
DQ7  
DQ6  
DQ5  
DQ4  
25 A11  
24 OE\  
23 A10  
22 CE\  
21 DQ8  
20 DQ7  
19 DQ6  
18 DQ5  
17 DQ4  
9
10  
11  
12  
13  
14  
15  
16  
VSS  
16  
32-Pin LCC (ECA)  
32-Pin Flat Pack (F)  
• All inputs and outputs are TTL compatible  
• Micross Components uses die type Cy7C109B from  
Cypress -6-T SRAM cell design  
4
3 2 1 32 31 30  
NC  
A16  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A2 10  
A1 11  
A0 12  
DQ1 13  
DQ2 14  
DQ3 15  
VSS 16  
1
2
3
4
5
6
7
8
9
32 VCC  
31 A15  
30 CE2  
29 WE\  
28 A13  
27 A8  
5
6
7
8
9
10  
11  
12  
13  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ1  
29  
28  
27  
26  
25  
24  
23  
22  
21  
WE  
\
A13  
A8  
A9  
26 A9  
25 A11  
24 OE\  
23 A10  
22 CE\  
21 DQ8  
20 DQ7  
19 DQ6  
18 DQ5  
17 DQ4  
A11  
OE  
\
A10  
CE1  
DQ8  
\
OPTIONS  
• Timing  
MARKING  
14 15 16 17 18 19 20  
12ns access  
15ns access  
20ns access  
25ns access  
35ns access  
45ns access  
55ns access  
70ns access  
85ns access  
100ns access  
120ns access  
-12 (contact factory)  
-15  
-20  
-25  
-35  
-45  
-55*  
-70*  
-85*  
-100*  
-120*  
GENERAL DESCRIPTION  
The MT5C1008 SRAM employs high-speed, low  
power CMOS designs using a four-transistor memory cell, and  
are fabricated using double-layer metal, double-layer polysili-  
con technology.  
For design flexibility in high-speed memory appli-  
cations, this device offers dual chip enables (CE1\, CE2) and  
output enable (OE\). These control pins can place the outputs  
in High-Z for additional flexibility in system design. All de-  
vices operate from a single +5V power supply and all inputs  
and outputs are fully TTL compatible.  
Writing to these devices is accomplished when write  
enable (WE\) and CE1\ inputs are both LOW and CE2 is HIGH.  
Reading is accomplished when WE\ and CE2 remain HIGH  
and CE1\ and OE\ go LOW. The devices offer a reduced  
power standby mode when disabled, allowing system designs  
to achieve low standby power requirements.  
• Package(s)•  
Ceramic DIP (400 mil)  
Ceramic DIP (600 mil)  
Ceramic LCC  
Ceramic LCC  
Ceramic Flatpack  
Ceramic SOJ  
C
No. 111  
No. 112  
No. 207  
No. 208  
No. 303  
No. 501  
No. 507  
CW  
EC  
ECA  
F
DCJ  
SOJ  
Ceramic SOJ  
The “L” version offers a 2V data retention mode,  
reducing current consumption to 1mA maximum.  
• 2V data retention/low power  
L
For more products and information  
please visit our web site at  
www.micross.com  
Micross Components reserves the right to change products or specifications without notice.  
MT5C1008  
Rev. 6.9 06/11  
1
1234567...18

中文翻译

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