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MT5C1001C-40/XT PDF预览

MT5C1001C-40/XT

更新时间： 2024-09-18 20:24:47
品牌 Logo 应用领域
MICROSS 静态存储器内存集成电路
页数 文件大小 规格书
13页 164K
描述
Standard SRAM, 1MX1, CMOS, CDIP28, 0.400 INCH, CERAMIC, DIP-28

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MT5C1001C-40/XT 数据手册

 浏览型号MT5C1001C-40/XT的Datasheet PDF文件第2页浏览型号MT5C1001C-40/XT的Datasheet PDF文件第3页浏览型号MT5C1001C-40/XT的Datasheet PDF文件第4页浏览型号MT5C1001C-40/XT的Datasheet PDF文件第5页浏览型号MT5C1001C-40/XT的Datasheet PDF文件第6页浏览型号MT5C1001C-40/XT的Datasheet PDF文件第7页 
SRAM  
MT5C1001  
Limited Availability  
Austin Semiconductor, Inc.  
1M x 1 SRAM  
PIN ASSIGNMENT  
(Top View)  
SRAM MEMORY ARRAY  
32-Pin LCC (EC)  
32-Pin SOJ (DCJ)  
AVAILABLE AS MILITARY  
28-Pin DIP (C)  
(400 MIL)  
SPECIFICATIONS  
• SMD 5962-92316  
• MIL-STD-883  
A10  
A11  
A12  
NC  
A13  
A14  
A15  
NC  
A16  
A17  
A18  
A19  
NC  
1
2
3
4
5
6
7
8
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
Vcc  
NC  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
NC  
A2  
NC  
A1  
A0  
D
A10  
A11  
A12  
A13  
A14  
A15  
NC  
1
2
3
4
5
6
7
8
9
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
Vcc  
A9  
A8  
A7  
A6  
A5  
A4  
NC  
A3  
A2  
A1  
A0  
D
FEATURES  
• High Speed: 20, 25, 35, and 45  
• Battery Backup: 2V data retention  
• Low power standby  
9
A16  
A17  
10  
11  
12  
13  
14  
15  
16  
A18 10  
A19 11  
• Single +5V (+10%) Power Supply  
• Easy memory expansion with CE\ and OE\ options.  
• All inputs and outputs are TTL compatible  
• Three-state output  
Q
12  
Q
WE\  
Vss  
WE\ 13  
Vss 14  
CE\  
CE\  
32-Pin Flat Pack (F)  
OPTIONS  
• Timing  
MARKING  
1
A10  
Vcc  
NC  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
NC  
A2  
NC  
A1  
A0  
D
3 2  
2
A11  
A12  
NC  
A13  
A14  
A15  
NC  
A16  
A17  
A18  
A19  
NC  
3 1  
3
3 0  
20ns access  
25ns access  
35ns access  
45ns access  
55ns access  
70ns access  
-20  
4
2 9  
5
2 8  
-25  
-35  
-45  
-55*  
-70*  
6
2 7  
7
2 6  
8
2 5  
9
2 4  
1 0  
1 1  
1 2  
1 3  
1 4  
1 5  
1 6  
2 3  
2 2  
2 1  
2 0  
1 9  
1 8  
1 7  
Q
WE\  
Vss  
• Package(s)  
CE\  
Ceramic DIP (400 mil)  
CeramicLCC  
Ceramic Flatpack  
Ceramic SOJ  
C
EC  
F
No. 109  
No. 207  
No. 303  
No. 501  
GENERAL DESCRIPTION  
DCJ  
The MT5C1001 employs low power, high-performance  
silicon-gate CMOS technology. Static design eliminates the  
need for external clocks or timing strobes while CMOS circuitry  
reduces power consumption and provides for greater  
reliability.  
• Operating Temperature Ranges  
Industrial (-40oC to +85oC)  
Military (-55oC to +125oC)  
IT  
XT  
For flexibility in high-speed memory applications, ASI  
offers chip enable (CE\) and output enable (OE\) capability.  
These enhancements can place the outputs in High-Z for addi-  
tional flexibility in system design. Writing to these devices is  
accomplished when write enable (WE|) and CE\ inputs are both  
LOW. Reading is accomplished when WE\ remains HIGH while  
CE\ and OE\ go LOW. The devices offer a reduced power  
standby mode when disabled. This allows system designs to  
achieve low standby power requirements.  
• 2V data retention/low power  
L
*Electrical characteristics identical to those provided for the  
45ns access devices.  
For more products and information  
please visit our web site at  
The “L” version provides an approximate 50 percent  
www.austinsemiconductor.com  
reduction in CMOS standby current (ISBC2) over the standard  
version.  
All devices operation from a single +5V power supply  
and all inputs and outputs are fully TTL compatible.  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
MT5C1001  
Rev. 2.0 2/00  
1
1234567...13

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MT5C1001C-40L/883C AUSTIN

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MT5C1001C-40L/IT AUSTIN

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 		1M x 1 SRAM SRAM MEMORY ARRAY
MT5C1001C-40L/XT AUSTIN

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 		1M x 1 SRAM SRAM MEMORY ARRAY
MT5C1001C-45/883C MICROSS

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 		Standard SRAM, 1MX1, 45ns, CMOS, CDIP28, 0.400 INCH, CERAMIC, DIP-28
MT5C1001C-45/883C AUSTIN

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 		1M x 1 SRAM SRAM MEMORY ARRAY
MT5C1001C-45/IT MICROSS

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 		Standard SRAM, 1MX1, 45ns, CMOS, CDIP28, 0.400 INCH, CERAMIC, DIP-28
MT5C1001C-45/XT MICROSS

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 		Standard SRAM, 1MX1, 45ns, CMOS, CDIP28, 0.400 INCH, CERAMIC, DIP-28
MT5C1001C-45E/883C MICROSS

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 		Standard SRAM, 1MX1, 45ns, CMOS, CDIP28, 0.400 INCH, CERAMIC, DIP-28
MT5C1001C-45L/883C AUSTIN

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 		1M x 1 SRAM SRAM MEMORY ARRAY
MT5C1001C-45L/883C MICROSS

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 		Standard SRAM, 1MX1, 45ns, CMOS, CDIP28, 0.400 INCH, CERAMIC, DIP-28

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