Datasheet > MT58L64L36FT-10T

MT58L64L36FT-10T

更新时间： 2024-11-08 07:12:27

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
17页	243K
描述
Cache SRAM, 64KX36, 10ns, CMOS, PQFP100, PLASTIC, MS-026, TQFP-100

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中文翻译

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数据手册

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MT58L64L36FT-10T 数据手册

2Mb: 128K x 18, 64K x 32/36

FLOW-THROUGH SYNCBURST SRAM

MT58L128L18F, MT58L64L32F,

MT58L64L36F; MT58L128V18F,

MT58L64V32F, MT58L64V36F

2Mb SYNCBURST^™

SRAM

3.3V VDD, 3.3V or 2.5V I/O, Flow-Through

FEATURES

• Fast clock and OE# access times

100-Pin TQFP**

• Single +3.3V +0.3V/ -0.165V power supply (V^DD)

• Separate +3.3V or +2.5V isolated output buffer supply

(VDDQ)

(D-1)

• SNOOZE MODE for reduced-power standby

• Common data inputs and data outputs

• Individual BYTE WRITE control and GLOBAL WRITE

• Three chip enables for simple depth expansion and

address pipelining

• Clock-controlled and registered addresses, data I/ Os

and control signals

• Internally self-timed WRITE cycle

• Burst control pin (interleaved or linear burst)

• Automatic power-down for portable applications

• 100-lead TQFP package for high density, high speed

• Low capacitive bus loading

• x18, x32 and x36 versions available

**JEDEC-standard MS-026 BHA (LQFP).

OPTIONS

MARKING

• Timing (Access/ Cycle/ MHz)

6.8ns/ 8.0ns/ 125 MHz

7.5ns/ 8.8ns/ 113 MHz

8.5ns/ 10ns/ 100 MHz

10ns/ 15ns/ 66 MHz

-6.8

-7.5

-8.5

-10

GENERAL DESCRIPTION

™

The Micron SyncBurst SRAM family employs high-

speed, low-power CMOS designs that are fabricated using

an advanced CMOS process.

Micron’s 2Mb SyncBurst SRAMs integrate a 128K x 18,

64Kx32,or 64Kx36SRAM corewith advanced synchronous

peripheral circuitry and a 2-bit burst counter. All

synchronous inputs pass through registers controlled by a

positive-edge-triggered single clock input (CLK). The

synchronous inputs include all addresses, all data inputs,

active LOW chip enable (CE#), two additional chip enables

for easy depth expansion (CE2, CE2#), burst control inputs

(ADSC#, ADSP#, ADV#), byte write enables (BWx#) and

global write (GW#).

• Configurations

3.3V I/ O

128K x 18

64K x 32

64K x 36

MT58L128L18F

MT58L64L32F

MT58L64L36F

2.5V I/ O

128K x 18

64K x 32

64K x 36

MT58L128V18F

MT58L64V32F

MT58L64V36F

Asynchronous inputs include the output enable (OE#),

snooze enable (ZZ) and clock (CLK). There is also a burst

mode pin (MODE) that selects between interleaved and

linear burst modes. The data-out (Q), enabled by OE#, is

also asynchronous. WRITE cycles can be from one to two

bytes wide (x18) or from one to four bytes wide (x32/ x36),

as controlled by the write control inputs.

• Package

100-pin TQFP

• Temperature

Commercial (0°C to +70°C)

Industrial (-40°C to +85°C)

None

Burst operation can be initiated with either address status

processor (ADSP#) or address status controller (ADSC#)

input pins. Subsequent burst addresses can be internally

generated as controlled by the burst advance pin (ADV#).

• Part Number Example: MT58L64L36FT-8.5 T

*Under consideration.

2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM

MT58L128L18F.p65 – Rev. 6/99

Micron Technology, Inc., reserves the right to change products or specifications without notice.

1999, Micron Technology, Inc.

All registered and unregistered trademarks are the sole property of their respective companies.

12 3 4 5 6 7...17

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与MT58L64L36FT-10T相关器件

型号	品牌	获取价格	描述	数据表
MT58L64L36FT-6.8	MICRON	获取价格	2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64L36FT-6.8IT	CYPRESS	获取价格	Cache SRAM, 64KX36, 6.8ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L64L36FT-7.5	MICRON	获取价格	2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64L36FT-7.5IT	CYPRESS	获取价格	Cache SRAM, 64KX36, 7.5ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L64L36FT-7.5T	CYPRESS	获取价格	Cache SRAM, 64KX36, 7.5ns, CMOS, PQFP100, PLASTIC, MS-026, TQFP-100
MT58L64L36FT8.5	CYPRESS	获取价格	64KX36 STANDARD SRAM, 8.5ns, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L64L36FT-8.5	MICRON	获取价格	2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64L36FT-8.5IT	CYPRESS	获取价格	Cache SRAM, 64KX36, 8.5ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L64L36FT-8.5T	CYPRESS	获取价格	Cache SRAM, 64KX36, 8.5ns, CMOS, PQFP100, PLASTIC, MS-026, TQFP-100
MT58L64L36PF-10IT	CYPRESS	获取价格	Standard SRAM, 64KX36, 5ns, CMOS, PBGA165, FBGA-165

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