Datasheet > MT58L512V18PF-10

MT58L512V18PF-10

更新时间： 2024-11-08 09:08:27

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
27页	393K
描述
Cache SRAM, 512KX18, 5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165

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中文翻译

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数据手册

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MT58L512V18PF-10 数据手册

8Mb: 512K x 18, 256K x 32/36

PIPELINED, SCD SYNCBURST SRAM

8Mb SYNCBURST^™

SRAM

MT58L512L18P, MT58L256L32P, MT58L256L36P;

MT58L512V18P, MT58L256V32P, MT58L256V36P

3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle

Deselect

FEATURES

100-Pin TQFP

• Fast clock and OE# access times

• Single +3.3V +0.3V/-0.165V power supply (V^DD)

• Separate +3.3V or +2.5V isolated output buffer

supply (VDDQ)

• SNOOZE MODE for reduced-power standby

• Single-cycle deselect (Pentium^®BSRAM-compatible)

• Common data inputs and data outputs

• Individual BYTE WRITE control and GLOBAL

WRITE

• Three chip enables for simple depth expansion

and address pipelining

• Clock-controlled and registered addresses, data

I/Os and control signals

165-Pin FBGA

• Internally self-timed WRITE cycle

• Burst control (interleaved or linear burst)

• Automatic power-down for portable applications

• 100-pin TQFP package

• 165-pin FBGA package

• Low capacitive bus loading

• x18, x32, and x36 versions available

OPTIONS

MARKING

• Timing (Access/Cycle/MHz)

3.5ns/6ns/166 MHz

4.0ns/7.5ns/133 MHz

5ns/10ns/100 MHz

• Configurations

3.3V I/O

-6

-7.5

-10

NOTE:1. JEDEC-standard MS-026 BHA (LQFP).

* A Part Marking Guide for the FBGA devices can be found on Micron’s

Web site—http://www.micron.com/support/index.html.

**Industrial temperature range offered in specific speed grades and

configurations. Contact factory for more information.

512K x 18

256K x 32

256K x 36

MT58L512L18P

MT58L256L32P

MT58L256L36P

2.5V I/O

512K x 18

256K x 32

256K x 36

MT58L512V18P

MT58L256V32P

MT58L256V36P

GENERAL DESCRIPTION

The Micron^®SyncBurst^™SRAM family employs

high-speed, low-power CMOS designs that are fabri-

cated using an advanced CMOS process.

• Packages

100-pin TQFP (2-chip enable)

100-pin TQFP (3-chip enable)

165-pin, 13mm x 15mm FBGA

• Operating Temperature Range

Commercial (0°C to +70°C)

Industrial (-40°C to +85°C)**

Micron’s 8Mb SyncBurst SRAMs integrate a 512K x

18, 256K x 32, or 256K x 36 SRAM core with advanced

synchronous peripheral circuitry and a 2-bit burst

counter. All synchronous inputs pass through registers

controlled by a positive-edge-triggered single-clock in-

put (CLK). The synchronous inputs include all ad-

dresses, all data inputs, active LOW chip enable (CE#),

two additional chip enables for easy depth expansion

(CE2, CE2#), burst control inputs (ADSC#, ADSP#,

ADV#), byte write enables (BWx#) and global write

None

Part Number Example:

MT58L512L18PT-6

8Mb: 512K x 18, 256K x 32/36 Pipelined, SCD SyncBurst SRAM

MT58L512L18P_C.p65 – Rev. 2/02

Micron Technology, Inc., reserves the right to change products or specifications without notice.

12 3 4 5 6 7...27

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与MT58L512V18PF-10相关器件

型号	品牌	获取价格	描述	数据表
MT58L512V18PF-10IT	CYPRESS	获取价格	Standard SRAM, 512KX18, 5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165
MT58L512V18PF-6	CYPRESS	获取价格	Cache SRAM, 512KX18, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165
MT58L512V18PF-6IT	CYPRESS	获取价格	Standard SRAM, 512KX18, 3.5ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165
MT58L512V18PF-7.5	CYPRESS	获取价格	Cache SRAM, 512KX18, 4ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165
MT58L512V18PF-7.5IT	CYPRESS	获取价格	Standard SRAM, 512KX18, 4ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165
MT58L512V18PS-10	CYPRESS	获取价格	Cache SRAM, 512KX18, 5ns, CMOS, PQFP100, PLASTIC, TQFP-100
MT58L512V18PS-10IT	CYPRESS	获取价格	Cache SRAM, 512KX18, 5ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L512V18PS-6	CYPRESS	获取价格	Cache SRAM, 512KX18, 3.5ns, CMOS, PQFP100, PLASTIC, TQFP-100
MT58L512V18PS-6.6	CYPRESS	获取价格	Standard SRAM, 512KX18, 3.8ns, CMOS, PQFP100, MS-026, TQFP-100
MT58L512V18PS-6IT	CYPRESS	获取价格	Cache SRAM, 512KX18, 3.5ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100

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