Datasheet > MT58L512L18F

MT58L512L18F

更新时间： 2022-11-26 13:51:28

品牌	Logo	应用领域
镁光 - MICRON		静态存储器
页数	文件大小	规格书
27页	472K
描述
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM

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数据手册

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MT58L512L18F 数据手册

8Mb : 512K x 18, 256K x 32/36

FLOW-THROUGH SYNCBURST SRAM

8Mb SYNCBURST^™

SRAM

MT58L512L18F, MT58L256L32F,

MT58L256L36F; MT58L512V18F,

MT58L256V32F, MT58L256V36F

3.3V VDD, 3.3V o r 2.5V I/O, Flo w -Th ro u g h

FEATURES

• Fast clock and OE# access times

• Single +3.3V +0.3V/-0.165V power supply (V^DD)

• Separate +3.3V or +2.5V isolated output buffer

supply (VDDQ)

100-Pin TQFP*

• SNOOZE MODE for reduced-power standby

• Common data inputs and data outputs

• Individual BYTE WRITE control and GLOBAL

WRITE

• Three chip enables for simple depth expansion

and address pipelining

• Clock-controlled and registered addresses, data I/

Os and control signals

• Internally self-timed WRITE cycle

• Burst control (interleaved or linear burst)

• Automatic power-down for portable applications

• 100-pin TQFP package

165-Pin FBGA

(Preliminary Package Data)

• 165-pin FBGA

• Low capacitive bus loading

• x18, x32, and x36 versions available

OPTIONS

MARKING*

• Timing (Access/Cycle/MHz)

7.5ns/8.8ns/113 MHz

8.5ns/10ns/100 MHz

10ns/15ns/66 MHz

-7.5

-8.5

-10

• Configurations

3.3V I/O

512K x 18

256K x 32

256K x 36

2.5V I/O

MT58L512L18F

MT58L256L32F

MT58L256L36F

*JEDEC-standard MS-026 BHA (LQFP).

512K x 18

256K x 32

256K x 36

MT58L512V18F

MT58L256V32F

MT58L256V36F

GENERAL DESCRIPTION

The Micron^®SyncBurst^™SRAM family employs

high-speed, low-power CMOS designs that are fabri-

cated using an advanced CMOS process.

• Packages

100-pin TQFP (2-chip enable)

100-pin TQFP (3-chip enable)

165-pin, 13mm x 15mm FBGA

Micron’s 8Mb SyncBurst SRAMs integrate a 512K x

18, 256K x 32, or 256K x 36 SRAM core with advanced

synchronous peripheral circuitry and a 2-bit burst

counter. All synchronous inputs pass through registers

controlled by a positive-edge-triggered single-clock in-

put (CLK). The synchronous inputs include all ad-

dresses, all data inputs, active LOW chip enable (CE#),

two additional chip enables for easy depth expansion

(CE2#, CE2), burst control inputs (ADSC#, ADSP#,

• Operating Temperature Range

Commercial (0°C to +70°C)

None

Part Number Example:

MT58L256V36FT-10

* A Part Marking Guide for the FBGA devices can be found on Micron's

web site—http://www.micronsemi.com/support/index.html.

8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM

MT58L512L18F_2.p65 – Rev. 7/00

Micron Technology, Inc., reserves the right to change products or specifications without notice.

12 3 4 5 6 7...27

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与MT58L512L18F相关器件

型号	品牌	描述	获取价格	数据表
MT58L512L18FB-10.5	CYPRESS	Standard SRAM, 512KX18, 9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119	获取价格
MT58L512L18FB-15	CYPRESS	Standard SRAM, 512KX18, 10ns, CMOS, PBGA119, 14 X 22 MM, BGA-119	获取价格
MT58L512L18FB-8	CYPRESS	Standard SRAM, 512KX18, 6.8ns, CMOS, PBGA119, 14 X 22 MM, BGA-119	获取价格
MT58L512L18FB-8.8	CYPRESS	Standard SRAM, 512KX18, 7.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119	获取价格
MT58L512L18FF-10	ROCHESTER	512KX18 CACHE SRAM, 10ns, PBGA165, 13 X 15 MM, FBGA-165	获取价格
MT58L512L18FF-10IT	ROCHESTER	512KX18 CACHE SRAM, 10ns, PBGA165, 13 X 15 MM, FBGA-165	获取价格