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MT58L256V32FS-8.5IT PDF预览

MT58L256V32FS-8.5IT

更新时间: 2024-01-27 00:16:32
品牌 Logo 应用领域
赛普拉斯 - CYPRESS 静态存储器内存集成电路
页数 文件大小 规格书
27页 417K
描述
Cache SRAM, 256KX32, 8.5ns, CMOS, PQFP100, PLASTIC, TQFP-100

MT58L256V32FS-8.5IT 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP,
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.43最长访问时间:8.5 ns
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:8388608 bit
内存集成电路类型:CACHE SRAM内存宽度:32
湿度敏感等级:3功能数量:1
端子数量:100字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX32封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

MT58L256V32FS-8.5IT 数据手册

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8Mb: 512K x 18, 256K x 32/36  
FLOW-THROUGH SYNCBURST SRAM  
8Mb SYNCBURST™  
SRAM  
MT58L512L18F, MT58L256L32F,  
MT58L256L36F; MT58L512V18F,  
MT58L256V32F, MT58L256V36F  
3.3V VDD, 3.3V or 2.5V I/O, Flow-Through  
FEATURES  
• Fast clock and OE# access times  
• Single +3.3V +0.3V/-0.165V power supply (VDD)  
• Separate +3.3V or +2.5V isolated output buffer  
supply (VDDQ)  
1
100-Pin TQFP  
• SNOOZE MODE for reduced-power standby  
• Common data inputs and data outputs  
• Individual BYTE WRITE control and GLOBAL WRITE  
• Three chip enables for simple depth expansion and  
address pipelining  
• Clock-controlled and registered addresses, data I/Os  
and control signals  
• Internally self-timed WRITE cycle  
• Burst control (interleaved or linear burst)  
• Automatic power-down for portable applications  
• 100-pin TQFP package  
165-Pin FBGA  
• 165-pin FBGA  
• Low capacitive bus loading  
• x18, x32, and x36 versions available  
OPTIONS  
MARKING  
• Timing (Access/Cycle/MHz)  
7.5ns/8.8ns/113 MHz  
8.5ns/10ns/100 MHz  
10ns/15ns/66 MHz  
-7.5  
-8.5  
-10  
NOTE:1. JEDEC-standard MS-026 BHA (LQFP).  
• Configurations  
3.3V I/O  
512K x 18  
256K x 32  
256K x 36  
2.5V I/O  
MT58L512L18F  
MT58L256L32F  
MT58L256L36F  
* A Part Marking Guide for the FBGA devices can be found on Micron’s  
Web site—http://www.micron.com/support/index.html.  
** Industrial temperature range offered in specific speed grades and  
configurations. Contact factory for more information.  
512K x 18  
256K x 32  
256K x 36  
MT58L512V18F  
MT58L256V32F  
MT58L256V36F  
GENERAL DESCRIPTION  
TheMicron® SyncBurstSRAMfamilyemployshigh-  
speed, low-power CMOS designs that are fabricated us-  
ing an advanced CMOS process.  
• Packages  
100-pin TQFP (2-chip enable)  
100-pin TQFP (3-chip enable)  
165-pin, 13mm x 15mm FBGA  
T
S
F*  
Micron’s 8Mb SyncBurst SRAMs integrate a 512K x 18,  
256K x 32, or 256K x 36 SRAM core with advanced syn-  
chronous peripheral circuitry and a 2-bit burst counter.  
All synchronous inputs pass through registers controlled  
by a positive-edge-triggered single-clock input (CLK).  
The synchronous inputs include all addresses, all data  
inputs, active LOW chip enable (CE#), two additional  
chip enables for easy depth expansion (CE2#, CE2), burst  
control inputs (ADSC#, ADSP#, ADV#), byte write  
• Operating Temperature Range  
Commercial (0°C to +70°C)  
Industrial (-40°C to +85°C)**  
None  
IT  
Part Number Example:  
MT58L256V36FT-10  
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM  
MT58L512L18F_C.p65 – Rev. 2/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
1
©2002, Micron Technology, Inc.  

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