Datasheet > MT58L256L18F1B-6.8

MT58L256L18F1B-6.8

更新时间： 2023-08-15 00:00:00

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器
页数	文件大小	规格书
31页	349K
描述
Standard SRAM, 256KX18, 6.8ns, CMOS, PBGA119, 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119

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MT58L256L18F1B-6.8 数据手册

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4Mb : 256K x 18, 128K x 32/36

FLOW-THROUGH SYNCBURST SRAM

4Mb SYNCBURST^™

SRAM

MT58L256L18F1, MT58L128L32F1,

MT58L128L36F1; MT58L256V18F1,

MT58L128V32F1, MT58L128V36F1

3.3V VDD, 3.3V o r 2.5V I/O, Flo w -Th ro u g h

FEATURES

• Fast clock an d OE# access tim es

• Sin gle +3.3V +0.3V/-0.165V power supply (V^DD)

• Separate +3.3V or +2.5V isolated output buffer

supply (V^DDQ)

100-Pin TQFP

• SNOOZE MODE for reduced-power stan dby

• Com m on data in puts an d data outputs

• Individual BYTE WRITE control and GLOBAL WRITE

• Th ree ch ip en ables for sim ple depth expan sion

an d address pipelin in g

• Clock-con trolled an d registered addresses, data

I/Os an d con trol sign als

• In tern ally self-tim ed WRITE cycle

• Burst con trol pin (in terleaved or lin ear burst)

• Autom atic power-down

• 165-pin FBGA package

• 100-pin TQFP package

• 119-pin BGA package

• Low capacitive bus loadin g

165-Pin FBGA

(Preliminary Package Data)

• x18, x32, an d x36 version s available

OPTIONS

MARKING

• Tim in g (Access/Cycle/MHz)

6.8n s/7.5n s/133 MHz

7.5n s/8.8n s/113 MHz

8.5n s/10n s/100 MHz

10n s/15n s/66 MHz

-6.8

-7.5

-8.5

-10

• Con figuration s

3.3V I/O

256K x 18

128K x 32

128K x 36

2.5V I/O

MT58L256L18F1

MT58L128L32F1

MT58L128L36F1

119-Pin BGA

256K x 18

128K x 32

128K x 36

MT58L256V18F1

MT58L128V32F1

MT58L128V36F1

• Packages

100-pin TQFP

165-pin FBGA

119-pin , 14m m x 22m m BGA

• Operatin g Tem perature Ran ge

Com m ercial (0°C to +70°C)

In dustrial (-40°C to +85°C)**

Non e

Part Number Example:

MT58L256L18F1T-8.5

* A Part Markin g Guide for th e FBGA devices can be foun d on Micron ’s

Web site—h ttp://www.m icron .com /support/in dex.h tm l.

** In dustrial tem perature ran ge offered in specific speed grades an d

con figuration s. Con tact factory for m ore in form ation .

NOTE: 1. JEDEC-standard MS-026 BHA (LQFP).

2. JEDEC-standard MS-028 BHA(PBGA).

4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM

MT58L256L18F1_D.p65 – Rev. 10/01

Micron Technology, Inc., reservesthe right to change productsor specificationswithout notice.

12 3 4 5 6 7...31

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