PRELIMINARY
4Mb: 256K x 18, 128K x 32/36
FLOW-THROUGH SYNCBURST SRAM
4Mb SYNCBURST™
SRAM
MT58L256L18F1, MT58L128L32F1,
MT58L128L36F1; MT58L256V18F1,
MT58L128V32F1, MT58L128V36F1
3.3V VDD, 3.3V or 2.5V I/O, Flow-Through
FEATURES
1
• Fast clock and OE# access times
• Single +3.3V +0.3V/-0.165V power supply (VDD)
• Separate +3.3V or +2.5V isolated output buffer
supply (VDDQ)
100-PinTQFP
• SNOOZE MODE for reduced-power standby
• Common data inputs and data outputs
• Individual BYTE WRITE control and GLOBAL WRITE
• Three chip enables for simple depth expansion
and address pipelining
• Clock-controlled and registered addresses, data
I/Os and control signals
• Internally self-timed WRITE cycle
• Burst control pin (interleaved or linear burst)
• Automatic power-down
• 165-pin FBGA package
• 100-pin TQFP package
165-PinFBGA
(Preliminary Package Data)
• 119-pin BGA package
• Low capacitive bus loading
• x18, x32, and x36 versions available
OPTIONS
MARKING*
• Timing (Access/Cycle/MHz)
6.8ns/7.5ns/133 MHz
7.5ns/8.8ns/113 MHz
8.5ns/10ns/100 MHz
10ns/15ns/66 MHz
-6.8
-7.5
-8.5
-10
• Configurations
3.3V I/O
256K x 18
128K x 32
128K x 36
2.5V I/O
MT58L256L18F1
MT58L128L32F1
MT58L128L36F1
2
119-Pin BGA
256K x 18
128K x 32
128K x 36
MT58L256V18F1
MT58L128V32F1
MT58L128V36F1
• Packages
100-pin TQFP
T
F
B
165-pin FBGA
119-pin, 14mm x 22mm BGA
• Operating Temperature Range
Commercial (0°C to +70°C)
Industrial (-40°C to +85°C)**
None
IT
Part Number Example:
MT58L256L18F1T-8.5
* A Part Marking Guide for the FBGA devices can be found on Micron’s
website—http://www.micron.com/support/index.html.
** Industrial temperature range offered in specific speed grades and
configurations. Contact factory for more information.
NOTE: 1. JEDEC-standardMS-026BHA(LQFP).
2. JEDEC-standardMS-028BHA(PBGA).
4Mb: 256K x 18, 128K x 32/36 Flow-Through SyncBurst SRAM
MT58L256L18F1_C.p65 – Rev. 6/01
MicronTechnology,Inc.,reservestherighttochangeproductsorspecificationswithoutnotice.
1
©2001,MicronTechnology,Inc.